사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | DiodeConfiguration | DiodeType | Voltage-DCReverse(Vr)(Max) | Current-AverageRectified(Io)(perDiode) | Voltage-Forward(Vf)(Max)@If | Speed | ReverseRecoveryTime(trr) | Current-ReverseLeakage@Vr | OperatingTemperature-Junction | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS3D020120P21200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,162 | - |
RFQ |
![]() 데이터시트 |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 30A (DC) | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole |
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AS3D040120P21200V,40A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED |
3,518 | - |
RFQ |
![]() 데이터시트 |
Tube | - | Active | 1 Pair Common Cathode | Silicon Carbide Schottky | 1200 V | 52A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | -55°C ~ 175°C | Through Hole |