| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  | GSIB15A60-E3/45BRIDGE RECT 1P 600V 3.5A GSIB-5SVishay General Semiconductor - Diodes Division | 3,076 | - | RFQ |   데이터시트 | Tube | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1 V @ 7.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|  | GSIB2080-E3/45BRIDGE RECT 1P 800V 3.5A GSIB-5SVishay General Semiconductor - Diodes Division | 3,016 | - | RFQ |   데이터시트 | Tube | - | Active | Single Phase | Standard | 800 V | 3.5 A | 1 V @ 10 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|  | GSIB2520-E3/45BRIDGE RECT 1P 200V 3.5A GSIB-5SVishay General Semiconductor - Diodes Division | 3,851 | - | RFQ |   데이터시트 | Tube | - | Active | Single Phase | Standard | 200 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|  | BU2006-E3/45BRIDGE RECT 1P 600V 3.5A BUVishay General Semiconductor - Diodes Division | 2,206 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 10 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|  | BU2008-E3/51BRIDGE RECT 1P 800V 3.5A BUVishay General Semiconductor - Diodes Division | 3,477 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 800 V | 3.5 A | 1.05 V @ 10 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|  | KBU8M-E4/51BRIDGE RECT 1PHASE 1KV 8A KBUVishay General Semiconductor - Diodes Division | 2,769 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 1 kV | 8 A | 1 V @ 8 A | 10 µA @ 1000 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | ||||||
|  | KBU6B-E4/51BRIDGE RECT 1PHASE 100V 6A KBUVishay General Semiconductor - Diodes Division | 3,411 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 100 V | 6 A | 1 V @ 6 A | 5 µA @ 100 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | ||||||
|  | KBU6M-E4/51BRIDGE RECT 1PHASE 1KV 6A KBUVishay General Semiconductor - Diodes Division | 2,751 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 1 kV | 6 A | 1 V @ 6 A | 5 µA @ 1000 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | ||||||
|   | GBPC2502W-E4/51BRIDGE RECT 1P 200V 25A GBPC-WVishay General Semiconductor - Diodes Division | 3,522 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 200 V | 25 A | 1.1 V @ 12.5 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC1201W-E4/51BRIDGE RECT 1P 100V 12A GBPC-WVishay General Semiconductor - Diodes Division | 3,358 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 100 V | 12 A | 1.1 V @ 6 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC1202W-E4/51BRIDGE RECT 1P 200V 12A GBPC-WVishay General Semiconductor - Diodes Division | 2,222 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 200 V | 12 A | 1.1 V @ 6 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC1206W-E4/51BRIDGE RECT 1P 600V 12A GBPC-WVishay General Semiconductor - Diodes Division | 3,037 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 600 V | 12 A | 1.1 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC1502W-E4/51BRIDGE RECT 1P 200V 15A GBPC-WVishay General Semiconductor - Diodes Division | 2,519 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 200 V | 15 A | 1.1 V @ 7.5 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC1510-E4/51BRIDGE RECT 1PHASE 1KV 15A GBPCVishay General Semiconductor - Diodes Division | 3,484 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 1 kV | 15 A | 1.1 V @ 7.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | ||||||
|   | GBPC1510W-E4/51BRIDGE RECT 1P 1KV 15A GBPC-WVishay General Semiconductor - Diodes Division | 3,861 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 1 kV | 15 A | 1.1 V @ 7.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | GBPC2508-E4/51BRIDGE RECT 1PHASE 800V 25A GBPCVishay General Semiconductor - Diodes Division | 2,855 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 800 V | 25 A | 1.1 V @ 12.5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | ||||||
|  | BU2506-E3/45BRIDGE RECT 1P 600V 3.5A BUVishay General Semiconductor - Diodes Division | 780 | - | RFQ |   데이터시트 | Bulk | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|   | VS-GBPC3504WBRIDGE RECT 1P 400V 35A GBPC-WVishay General Semiconductor - Diodes Division | 2,693 | - | RFQ |   데이터시트 | Bulk | VS-GBPC | Active | Single Phase | Standard | 400 V | 35 A | 1.1 V @ 17.5 A | 2 mA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | VS-GBPC2510WBRIDGE RECT 1P 1KV 25A GBPC-WVishay General Semiconductor - Diodes Division | 2,898 | - | RFQ |   데이터시트 | Tray | VS-GBPC | Active | Single Phase | Standard | 1 kV | 25 A | 1.1 V @ 12.5 A | 2 mA @ 1 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | ||||||
|   | VS-GBPC3506WBRIDGE RECT 1P 600V 35A GBPC-WVishay General Semiconductor - Diodes Division | 2,410 | - | RFQ |   데이터시트 | Tray | VS-GBPC | Active | Single Phase | Standard | 600 V | 35 A | - | 2 mA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W |