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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS4PDHM3_A/HDIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,984 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
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|
AS4PDHM3_A/IDIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,613 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PGHM3_A/HDIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PGHM3_A/IDIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PJHM3_A/HDIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,082 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PJHM3_A/IDIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,755 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PKHM3_A/HDIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,597 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PKHM3_A/IDIODE AVALANCHE 800V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PMHM3_A/HDIODE AVALANCH 1KV 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,027 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
|
AS4PMHM3_A/IDIODE AVALANCH 1KV 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,590 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 1000 V | 1000 V | 2.4A | -55°C ~ 175°C | 1.1 V @ 4 A |
|
NSB8BT-E3/81DIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,602 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
NSB8DT-E3/81DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,339 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
NSB8GT-E3/81DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
NSB8KT-E3/81DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,447 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
FESB8GT-E3/45DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,318 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
|
|
FESB8JT-E3/45DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
|
|
VB20120S-E3/4WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,728 | - |
RFQ |
데이터시트 |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A |
|
|
VS-8ETH06STRL-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,578 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
|
VS-8ETH06STRR-M3DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
VS-16EDH02-M3/IDIODE GEN PURP 200V 16A TO263AC Vishay General Semiconductor - Diodes Division |
3,346 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 32 ns | 15 µA @ 200 V | 200 V | 16A | -55°C ~ 175°C | 1 V @ 16 A |
- 1500+ 일일 평균 RFQ
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