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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GPP60B-E3/73DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
2,769 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
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1N4942GPHE3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,560 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 1 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BY229B-800HE3/81DIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,776 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 145 ns | 10 µA @ 800 V | 800 V | 8A | -40°C ~ 150°C | 1.85 V @ 20 A |
|
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GPP60BHE3/73DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
3,346 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A |
|
|
1N4944GPHE3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,586 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 150 ns | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
BY251GP-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,708 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
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GPP60D-E3/73DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 5.5 µs | 5 µA @ 200 V | 200 V | 6A | -55°C ~ 175°C | 1.1 V @ 6 A | |
|
|
1N4946GPHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,019 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
VS-HFA25TB60-N3DIODE GEN PURP 600V 25A TO220AC Vishay General Semiconductor - Diodes Division |
2,130 | - |
RFQ |
데이터시트 |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
|
VS-MBR735-N3DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,177 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
|
VS-MBR745-N3DIODE SCHOTTKY 45V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
|
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VS-MUR820-N3DIODE GEN PURP 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,852 | - |
RFQ |
데이터시트 |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Obsolete | Through Hole | - | 20 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
|
VS-8ETU04STRRPBFDIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,004 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -65°C ~ 175°C | 1.3 V @ 8 A |
|
|
VS-8ETX06STRLPBFDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,531 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 31 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
|
VS-8ETX06STRRPBFDIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,042 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 17 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 3 V @ 8 A |
|
VS-8EWF02STRRPBFDIODE GEN PURP 200V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,020 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
VS-8EWF06STRLPBFDIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,997 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 55 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
VS-8EWF06STRPBFDIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
2,768 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
VS-8EWF06STRRPBFDIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,610 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 55 ns | 100 µA @ 600 V | 600 V | 8A | -40°C ~ 150°C | 1.2 V @ 8 A | |
|
|
VS-8EWF12STRLPBFDIODE GEN PURP 1.2KV 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,681 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 100 µA @ 1200 V | 1200 V | 8A | -40°C ~ 150°C | 1.3 V @ 8 A |
- 1500+ 일일 평균 RFQ
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- 15,000+ 재고 창고
