+86 075582561136
BOM 업로드
다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FESB16AT-E3/81DIODE GEN PURP 50V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,750 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
VS-15ETH03STRLHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
2,399 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -55°C ~ 175°C | 1.25 V @ 15 A |
|
BYV13-TAPDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,535 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
|
GIB1404HE3_A/PDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,433 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 150°C | 975 mV @ 8 A |
|
|
FESB16BT-E3/81DIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division |
2,563 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 100 V | 100 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
|
VS-15ETH03STRRHM3FREDS - D2PAK Vishay General Semiconductor - Diodes Division |
3,516 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -55°C ~ 175°C | 1.25 V @ 15 A |
|
|
BYW33-TAPDIODE AVALANCHE 300V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,909 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 300 V | 300 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
UGF8BTHE3_A/PDIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,872 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
FESB16CT-E3/81DIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,536 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 150 V | 150 V | 16A | -65°C ~ 150°C | 975 mV @ 16 A | |
|
|
BYX84TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 20pF @ 4V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
|
UGF8DTHE3_A/PDIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,609 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
VS-8EWH06FNTRHM3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,071 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
VS-ETU0805FP-M3DIODE GEN PURP 500V 8A TO220FP Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
데이터시트 |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 9 µA @ 500 V | 500 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
VS-2EFU06HM3/IDIODE GEN PURP 600V 2A DO219AB Vishay General Semiconductor - Diodes Division |
3,429 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 3 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.35 V @ 2 A |
|
|
BYT51G-TRDIODE AVALANCHE 400V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,503 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
VS-8EWH06FNTRLHM3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,692 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
VF30120S-E3/4WDIODE SCHOTTKY 120V 30A ITO220AB Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
데이터시트 |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A |
|
|
BYT52D-TRDIODE AVALANCHE 200V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,606 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 200 V | 200 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
VS-8EWH06FNTRRHM3DIODE GEN PURP 600V 8A D-PAK Vishay General Semiconductor - Diodes Division |
3,917 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
|
VS-30ETH06STRL-M3DIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,144 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
