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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYT54K-TAPDIODE AVALANCHE 800V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,680 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 800 V | 800 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
BYM11-100HE3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,301 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYV27-050-TAPDIODE AVALANCHE 55V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,259 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 25 ns | 1 µA @ 55 V | 55 V | 2A | -55°C ~ 175°C | 1.07 V @ 3 A | |
|
|
BYM11-200HE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,033 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYT51M-TRDIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,666 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
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EGP10GE-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,437 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
|
BYM11-400HE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYT52K-TRDIODE AVALANCHE 800V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 800 V | 800 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
GF1AHE3/67ADIODE GEN PURP 50V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
GF1GHE3/67ADIODE GEN PURP 400V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,369 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SS34-3HE3_B/HDIODE SCHOTTKY 40V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,335 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
|
|
GF1KHE3/67ADIODE GEN PURP 800V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,579 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SS34-3HE3_B/IDIODE SCHOTTKY 40V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,344 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
|
|
GF1MHE3/67ADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,029 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SS35-1HE3_B/IDIODE SCHOTTKY 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,995 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
RGF1DHE3/67ADIODE GEN PURP 200V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,480 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8.5pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
SS36-001HE3_B/HDIODE SCHOTTKY 60V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 750 mV @ 3 A | |
|
|
BYM11-50HE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,107 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYT53D-TRDIODE AVALANCHE 200V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,426 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
BYM11-600HE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,550 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
