사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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SS2FH10-M3/HDIODE SCHOTTKY 100V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
11,583 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 4V, 1MHz | - | 5 µA @ 10 V | 100 V | 2A | -55°C ~ 175°C | 860 mV @ 2 A |
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BA158-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,790 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 125°C | 1.3 V @ 1 A | |
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S1FLK-M-08DIODE GP 800V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
2,975 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
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RS07D-M-08DIODE GP 200V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
35,765 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 200 V | 200 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
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VS-2ENH02-M3/84AFRED PT RECTIFIER 2A SMP Vishay General Semiconductor - Diodes Division |
2,861 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1 V @ 2 A |
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S1A-E3/5ATDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,459 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SS1F4HM3/HDIODE SCHOTTKY 40V 1A DO219AB Vishay General Semiconductor - Diodes Division |
14,712 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 85pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 1A | 175°C (Max) | 520 mV @ 1 A |
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SB260S-E3/73DIODE SCHOTTKY 60V 2A DO204AL Vishay General Semiconductor - Diodes Division |
6,816 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
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1N4249GP-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
1,673 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
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SS2FH6HM3/HDIODE SCHOTTKY 60V 2A DO219AB Vishay General Semiconductor - Diodes Division |
4,029 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 3 µA @ 60 V | 60 V | 2A | -55°C ~ 175°C | 780 mV @ 2 A |
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BYS10-25-E3/TRDIODE SCHOTTKY 25V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
4,432 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 25 V | 25 V | 1.5A | -65°C ~ 150°C | 500 mV @ 1 A | |
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VSKY05401006-G4-08DIODE SCHTKY 40V 500MA CLP10062L Vishay General Semiconductor - Diodes Division |
1,089 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 140pF @ 0V, 1MHz | - | 75 µA @ 30 V | 40 V | 500mA | 150°C (Max) | 460 mV @ 500 mA | |
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U1D-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
7,630 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 24 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
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ES07B-GS18DIODE GEN PURP 100V 1.2A DO219AB Vishay General Semiconductor - Diodes Division |
55,283 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 50MHz | 25 ns | 10 µA @ 100 V | 100 V | 1.2A | -55°C ~ 150°C | 980 mV @ 1 A | |
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S1FLJ-GS08DIODE GP 600V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
1,721 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SD103A-TAPDIODE SCHOTTKY 40V SGL DO35 Vishay General Semiconductor - Diodes Division |
1,257 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 200mA | 125°C (Max) | 600 mV @ 200 mA |
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VSSAF510-M3/HDIODE SCHOTTKY 100V 5A DO221AC Vishay General Semiconductor - Diodes Division |
6,506 | - |
RFQ |
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Tape & Reel (TR),Cut Tape (CT) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 440pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 5A | -40°C ~ 150°C | 750 mV @ 5 A |
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SBYV26C-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
8,475 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A | |
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MSE07PJHM3/89ADIODE GP 600V 700MA MICROSMP Vishay General Semiconductor - Diodes Division |
4,470 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 4V, 1MHz | 780 ns | 1 µA @ 600 V | 600 V | 700mA | -55°C ~ 175°C | 1.08 V @ 700 mA |
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UF4004-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,355 | - |
RFQ |
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Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |