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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N6623UDIODE GEN PURP 800V 1A A-MELF Microchip Technology |
2,334 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
JANTXV1N6624UDIODE GEN PURP 900V 1A A-MELF Microchip Technology |
2,799 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 500 nA @ 900 V | 900 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
JANTX1N6626UDIODE GEN PURP 200V 1.75A A-MELF Microchip Technology |
2,183 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 200 V | 200 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
JANTX1N6627UDIODE GEN PURP 400V 1.75A E-MELF Microchip Technology |
2,291 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 400 V | 400 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
APT60S20BGDIODE SCHOTTKY 200V 75A TO247 Microchip Technology |
1,380 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 55 ns | 1 mA @ 200 V | 200 V | 75A | -55°C ~ 150°C | 900 mV @ 60 A | |
|
|
JANTXV1N6843U3SCHOTTKY DIODE Microchip Technology |
2,551 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
UES1002/TRRECTIFIER UFR,FRR Microchip Technology |
3,881 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 2 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 975 mV @ 1 A | ||
|
LSM115JE3/TR13DIODE SCHOTTKY 15V 1A DO214BA Microchip Technology |
17,455 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 mA @ 15 V | 15 V | 1A | -55°C ~ 150°C | 220 mV @ 1 A | |
|
1N5552DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
1,115 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
APT100S20BGDIODE SCHOTTKY 200V 120A TO247 Microchip Technology |
4,207 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | 70 ns | 2 mA @ 200 V | 200 V | 120A | -55°C ~ 150°C | 950 mV @ 100 A | |
|
|
MSASC100W100H/TRDIODE POWER SCHOTTKY Microchip Technology |
3,601 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | - | 100 V | 100A | -65°C ~ 175°C | 950 mV @ 80 A | ||
|
|
1N6774RECTIFIER DIODE Microchip Technology |
2,372 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 300pF @ 5V, 1MHz | 35 ns | 10 µA @ 800 mV | 50 V | 15A (DC) | -65°C ~ 150°C | 1.15 V @ 15 A | ||
|
|
JANTXV1N7043CAT1SCHOTTKY DIODE Microchip Technology |
2,073 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JANTXV1N7043CCT1SCHOTTKY DIODE Microchip Technology |
3,356 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/730 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 600pF @ 0V, 1MHz | - | 500 µA @ 100 V | 100 V | 35A | -65°C ~ 150°C | 1.3 V @ 35 A |
|
|
1N6842U3SCHOTTKY RECTIFIER Microchip Technology |
3,751 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 50 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 900 mV @ 15 A | ||
|
|
JANTXV1N6074DIODE GEN PURP 100V 850MA AXIAL Microchip Technology |
3,111 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 100 V | 100 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A |
|
|
1N6841SCHOTTKY RECTIFIER Microchip Technology |
2,303 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
JANTXV1N6075DIODE GEN PURP 150V 850MA AXIAL Microchip Technology |
2,184 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 150 V | 150 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A |
|
|
1N6841U3SCHOTTKY RECTIFIER Microchip Technology |
2,009 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/678 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 880 mV @ 20 A |
|
|
JANTXV1N6073DIODE GEN PURP 50V 850MA AXIAL Microchip Technology |
3,491 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A |
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