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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-85HFL40S02DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 400 V | 400 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
JANTX1N5620US/TRSTD RECTIFIER Microchip Technology |
3,137 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
VS-86HFR60DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 600 V | 600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
VS-10ETF02S-M3DIODE GEN PURP 200V 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,115 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 10A | - | 1.2 V @ 10 A | |
|
|
VS-86HF40DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,460 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 400 V | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-HFA06TB120SR-M3DIODE GEN PURP 1.2KV 6A D2PAK Vishay General Semiconductor - Diodes Division |
2,955 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A (DC) | -55°C ~ 150°C | 3.9 V @ 12 A |
|
|
VS-85HFLR40S02DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 400 V | 400 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
VS-72HF60DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,101 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 600 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
VS-86HFR160DIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,325 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1600 V | 1600 V | 85A | -65°C ~ 150°C | 1.4 V @ 267 A | |
|
VS-50WQ04FNTRLHM3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
3,323 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | 3 mA @ 40 V | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A |
|
|
VS-86HFR40DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,639 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 9 mA @ 400 V | 400 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VB30120SG-E3/8WDIODE SCHOTTKY 120V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,229 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A |
|
|
1N6546DIODE RECT ULT FAST REC A-PKG Microchip Technology |
2,225 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
VS-72HFR60DIODE GEN PURP 600V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,439 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 600 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
VS-72HFR140DIODE GEN PURP 1.4KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,519 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1400 V | 70A | -65°C ~ 150°C | 1.46 V @ 220 A | |
|
|
VS-50WQ04FNTRRHM3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
2,278 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | 3 mA @ 40 V | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A |
|
|
JAN1N6628DIODE GEN PURP 660V 1.75A AXIAL Microchip Technology |
2,833 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 2 µA @ 600 V | 660 V | 1.75A | -65°C ~ 175°C | 1.35 V @ 1.2 A |
|
|
VS-HFA04SD60SL-M3DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division |
3,329 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.8 V @ 4 A |
|
|
FR20AR02DIODE GEN PURP REV 50V 20A DO5 GeneSiC Semiconductor |
2,150 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 50 V | 20A | -40°C ~ 125°C | 1 V @ 20 A | |
|
1N5419E3/TRRECTIFIER UFR,FRR Microchip Technology |
2,759 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
