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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DPG10I200PMDIODE GEN PURP 200V 10A TO220FP IXYS |
2,209 | - |
RFQ |
데이터시트 |
Tube | HiPerFRED²™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 1 µA @ 200 V | 200 V | 10A | -55°C ~ 175°C | 1.27 V @ 10 A |
|
RB058L-60DDTE25DIODE SCHOTTKY 60V 3A PMDS Rohm Semiconductor |
2,732 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4 µA @ 60 V | 60 V | 3A | 150°C (Max) | 640 mV @ 3 A |
|
DSB20I15PADIODE SCHOTTKY 15V 20A TO220AC IXYS |
2,170 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 µA @ 15 V | 15 V | 20A | -55°C ~ 150°C | 480 mV @ 20 A | |
|
UF5404-E3/73DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,111 | - |
RFQ |
데이터시트 |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
QR30C06F_T0_00001PLANAR STRUCTURED SUPERFAST RECO Panjit International Inc. |
3,044 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 74 ns | 3 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.2 V @ 30 A | ||
|
ES3ADIODE GEN PURP 50V 3A SMC onsemi |
3,889 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 20 ns | 10 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 950 mV @ 3 A | |
|
|
DMA10IM1600UZ-TUBPOWER DIODE DISCRETES-RECTIFIER IXYS |
2,311 | - |
RFQ |
데이터시트 |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 400V, 1MHz | - | 10 µA @ 1600 V | 1600 V | 10A | -55°C ~ 175°C | 1.26 V @ 10 A | |
|
SS2H10-E3/52TDIODE SCHOTTKY 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,888 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A | |
|
MBRF10200DIODE SCHOTTKY 10A 200V ITO220AC Taiwan Semiconductor Corporation |
2,506 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 10A (DC) | -55°C ~ 150°C | 1.05 V @ 10 A | ||
|
|
SS2H10HE3_A/HDIODE SCHOTTKY 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
|
|
MUR2505RDIODE GEN PURP REV 50V 25A DO4 GeneSiC Semiconductor |
3,468 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 50 V | 25A | -55°C ~ 150°C | 1 V @ 25 A | |
|
JAN1N5417US/TRRECTIFIER UFR,FRR Microchip Technology |
3,811 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
JANTX1N5190/TRRECTIFIER UFR,FRR Microchip Technology |
2,653 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Military, MIL-PRF-19500/424 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 400 ns | 2 µA @ 600 V | 600 V | 3A | - | 1.5 V @ 9 A |
|
|
KSQ15A04DIODE SCHOTTKY 40V 15A TO-247 2P KYOCERA AVX |
3,833 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 15 mA @ 40 V | 40 V | 15A | -40°C ~ 150°C | 550 mV @ 15 A | |
|
|
JANTXV1N6641USDIODE GEN PURP 50V 300MA D-MELF Microchip Technology |
3,203 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/609 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 5 ns | 100 nA @ 50 V | 50 V | 300mA | -65°C ~ 175°C | 1.1 V @ 200 mA |
|
|
HSM840G/TR13DIODE SCHOTTKY 40V 8A DO215AB Microchip Technology |
2,519 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 40 V | 40 V | 8A | -55°C ~ 175°C | 620 mV @ 8 A | |
|
|
MUR2520DIODE GEN PURP 200V 25A DO4 GeneSiC Semiconductor |
2,986 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 10 µA @ 50 V | 200 V | 25A | -55°C ~ 150°C | 1 V @ 25 A | |
|
|
VS-72HFR120DIODE GEN PURP 1.2KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,370 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
1N6073/TRRECTIFIER UFR,FRR Microchip Technology |
3,894 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A | |
|
|
VS-EPH3007L-N3RECTIFIER HYPERFAST 30A TO-247AD Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
- 1500+ 일일 평균 RFQ
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- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
