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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N1188RDIODE GEN PURP REV 400V 35A DO5 GeneSiC Semiconductor |
3,887 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 400 V | 35A | -65°C ~ 190°C | 1.2 V @ 35 A | |
|
FR30J02DIODE GEN PURP 600V 30A DO5 GeneSiC Semiconductor |
2,329 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 600 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
MBR8045RDIODE SCHOTTKY REV 45V DO5 GeneSiC Semiconductor |
2,537 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1 mA @ 45 V | 45 V | 80A | -55°C ~ 150°C | 650 mV @ 80 A | |
|
GB50SLT12-247DIODE SCHOTTKY 1.2KV 50A TO247AC GeneSiC Semiconductor |
3,008 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Not For New Designs | Through Hole | 2940pF @ 1V, 1MHz | 0 ns | 1 mA @ 1200 V | 1200 V | 50A | -55°C ~ 175°C | 1.8 V @ 50 A | |
|
S300YRDIODE GEN PURP REV 1.6KV DO9 GeneSiC Semiconductor |
3,477 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 1600 V | 1600 V | 300A | -60°C ~ 180°C | 1.2 V @ 300 A | |
|
MBRH12040RDIODE SCHOTTKY 40V 120A D-67 GeneSiC Semiconductor |
2,600 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis Mount | - | - | 1 mA @ 40 V | 40 V | 120A | -55°C ~ 150°C | 700 mV @ 120 A | |
|
|
MBRH20045DIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor |
2,969 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | - | - | 5 mA @ 20 V | 45 V | 200A | - | 650 mV @ 200 A | |
|
1N1186ADIODE GEN PURP 200V 40A DO5 GeneSiC Semiconductor |
3,669 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |
|
FR40G02DIODE GEN PURP 400V 40A DO5 GeneSiC Semiconductor |
2,266 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 100 V | 400 V | 40A | -40°C ~ 125°C | 1 V @ 40 A | |
|
FR70GR02DIODE GEN PURP REV 400V 70A DO5 GeneSiC Semiconductor |
100 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 100 V | 400 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
|
MBRH20045RDIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor |
2,156 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis Mount | - | - | 1 mA @ 45 V | 45 V | 200A | -55°C ~ 150°C | 700 mV @ 200 A | |
|
GD10MPS17H1700V 10A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor |
3,031 | - |
RFQ |
데이터시트 |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 721pF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 28A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GC50MPS12-247SIC DIODE 1200V 50A TO-247-2 GeneSiC Semiconductor |
2,205 | - |
RFQ |
데이터시트 |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 3263pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 212A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A |
|
GB05SLT12-220DIODE SCHOTTKY 1.2KV 5A TO220AC GeneSiC Semiconductor |
2,604 | - |
RFQ |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 2 A | ||
|
GB05SLT12-252DIODE SILICON 1.2KV 5A TO252 GeneSiC Semiconductor |
2,804 | - |
RFQ |
데이터시트 |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A | -55°C ~ 175°C | 1.8 V @ 2 A | |
|
|
GB20SLT12-247DIODE SCHOTTKY 1.2KV 20A TO247AC GeneSiC Semiconductor |
2,813 | - |
RFQ |
데이터시트 |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 968pF @ 1V, 1MHz | 0 ns | 200 µA @ 1200 V | 1200 V | 20A | -55°C ~ 175°C | 2 V @ 20 A | |
|
|
GB02SLT12-220DIODE SCHOTTKY 1.2KV 2A TO220AC GeneSiC Semiconductor |
3,321 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 138pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 2A | -55°C ~ 175°C | 1.8 V @ 2 A | ||
|
GB02SLT12-252DIODE SIC SCHKY 1.2KV 2A TO252 GeneSiC Semiconductor |
3,268 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 131pF @ 1V, 1MHz | 0 ns | 50 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 2 A |
|
|
GB10SLT12-220DIODE SCHOTTKY 1200V 10A TO220AC GeneSiC Semiconductor |
3,947 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 520pF @ 1V, 1MHz | 0 ns | 40 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 1.8 V @ 10 A | ||
|
|
GB10SLT12-252DIODE SCHOTTKY 1.2KV 10A TO252 GeneSiC Semiconductor |
2,260 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 520pF @ 1V, 1MHz | 0 ns | 250 µA @ 1200 V | 1200 V | 10A | -55°C ~ 175°C | 2 V @ 10 A |
- 1500+ 일일 평균 RFQ
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