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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S1MLWDIODE STD REC 1000V 1A SOD123W Taiwan Semiconductor Corporation |
3,499 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 1 µA @ 1000 V | 1000 V | 1A (DC) | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
MURA215T3GDIODE GEN PURP 150V 2A SMA onsemi |
3,056 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A | |
|
CDSV-21-GDIODE GEN PURP 200V 200MA SOD323 Comchip Technology |
2,782 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA (DC) | -65°C ~ 150°C | 1.25 V @ 200 mA | |
|
BYG10G-E3/TRDIODE AVALANCHE 400V 1.5A Vishay General Semiconductor - Diodes Division |
3,284 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
S1DFSHMXGDIODE, 1A, 200V, AEC-Q101, SOD-1 Taiwan Semiconductor Corporation |
2,742 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | - | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
BYG10J-E3/TRDIODE AVALANCHE 600V 1.5A Vishay General Semiconductor - Diodes Division |
2,759 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
S1GFSHMXGDIODE, 1A, 400V, AEC-Q101, SOD-1 Taiwan Semiconductor Corporation |
3,363 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | - | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
UPS3200/TR13DIODE SCHOTTKY 3A 200V POWERMITE Microchip Technology |
2,892 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
1N6623US/TRRECTIFIER UFR,FRR Microchip Technology |
2,387 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 50 ns | 500 nA @ 880 V | 880 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
S85DDIODE GEN PURP 200V 85A DO5 GeneSiC Semiconductor |
3,257 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
VS-ETH1506SHM3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,124 | - |
RFQ |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A | |
|
|
JAN1N3612D MET 1A STD 400V HR Semtech Corporation |
3,851 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
MUR7020DIODE GEN PURP 200V 70A DO5 GeneSiC Semiconductor |
3,883 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 75 ns | 25 µA @ 50 V | 200 V | 70A | -55°C ~ 150°C | 1 V @ 70 A | |
|
CDLL6675DIODE SCHOTTKY 20V 200MA DO213AA Microchip Technology |
3,862 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 5 µA @ 20 V | 20 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
VS-70HFL40S05DIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,659 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
S85DRDIODE GEN PURP REV 200V 85A DO5 GeneSiC Semiconductor |
2,711 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 200 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
DSS16-0045AS-TUBDIODE SCHOTTKY 45V 16A TO263AB IXYS |
2,579 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 16A | -55°C ~ 175°C | 670 mV @ 15 A | |
|
|
JAN1N3613D MET 1A STD 600V HR Semtech Corporation |
2,762 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
FR70B02DIODE GEN PURP 100V 70A DO5 GeneSiC Semiconductor |
2,074 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 100 V | 100 V | 70A | -40°C ~ 125°C | 1.4 V @ 70 A | |
|
|
IDP2308XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
2,082 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
- 1500+ 일일 평균 RFQ
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