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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UG4C-E3/54DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,911 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
RS1AHE3_A/IDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,085 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4C-M3/54DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,694 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
S3BC-HFRECTIFIER GEN PURP 100V 3A SMC Comchip Technology |
3,215 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | ||
|
RS2KAHR3GDIODE GEN PURP 800V 1.5A DO214AC Taiwan Semiconductor Corporation |
2,993 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2BAHR3GDIODE GEN PURP 100V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,319 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
VS-4ESH02-M3/86ADIODE GEN PURP 200V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,614 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 2 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 930 mV @ 4 A |
|
|
RS1BHE3_A/HDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,117 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
UG4D-M3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,740 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
S2KHE3_A/IDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,350 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
RS2MAHR3GDIODE GEN PURP 1KV 1.5A DO214AC Taiwan Semiconductor Corporation |
2,531 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
RS2DAHR3GDIODE GEN PURP 200V 1.5A DO214AC Taiwan Semiconductor Corporation |
3,603 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 50pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
S3DB R5GDIODE GEN PURP 200V 3A DO214AA Taiwan Semiconductor Corporation |
2,423 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A | |
|
|
RS1BHE3_A/IDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,308 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
V8PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,268 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1150pF @ 4V, 1MHz | - | 600 µA @ 60 V | 60 V | 8A | -40°C ~ 175°C | 640 mV @ 8 A |
|
SB1H90-E3/73DIODE SCHOTTKY 90V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,415 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 µA @ 90 V | 90 V | 1A | 175°C (Max) | 770 mV @ 1 A | |
|
SF24G A0GDIODE GEN PURP 200V 2A DO204AC Taiwan Semiconductor Corporation |
3,488 | - |
RFQ |
데이터시트 |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
S5D V6GDIODE GEN PURP 200V 5A DO214AB Taiwan Semiconductor Corporation |
2,274 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 5A | -55°C ~ 150°C | - | |
|
|
SE40PBHM3_A/IDIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,123 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 100 V | 100 V | 2.4A | -55°C ~ 175°C | 1.05 V @ 4 A |
|
|
RS1DHE3_A/HDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
