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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EGF1THE3/5CADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,422 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
SRA1040DIODE SCHOTTKY 40V 10A TO220AC Taiwan Semiconductor Corporation |
3,718 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 10A (DC) | -55°C ~ 125°C | 550 mV @ 10 A | ||
|
SBAT54CWT1G-M02SBAT54CW - SCHOTTKY BARRIER DIOD Rochester Electronics, LLC |
3,325 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
UGA15120HDIODE GEN PURP 15A TO220AC Taiwan Semiconductor Corporation |
3,470 | - |
RFQ |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 5 µA @ 1200 V | 1200 V | 15A (DC) | -55°C ~ 175°C | 2.9 V @ 15 A | |
|
S10JC R7DIODE SCHOTTKY DO214AB Taiwan Semiconductor Corporation |
3,375 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | - | 1 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 150°C | 1.1 V @ 10 A | ||
|
IDD15E60BUMA1DIODE GEN PURP 600V TO252-3 Infineon Technologies |
2,466 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 87 ns | 50 µA @ 600 V | 600 V | 29.2A (DC) | -40°C ~ 175°C | 2 V @ 15 A | ||
|
|
EGF1THE3/67ADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,205 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
6A60GH A0GDIODE GEN PURP 6A 600V R-6 Taiwan Semiconductor Corporation |
3,625 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 150°C | 1 V @ 6 A | |
|
|
MBRF5200DIODE SCHOTTKY 200V 5A ITO220AC Taiwan Semiconductor Corporation |
3,513 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 200 V | 200 V | 5A (DC) | -55°C ~ 150°C | 1.02 V @ 5 A | ||
|
BYT51M-TAPDIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,913 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
SS54F-HFDIODE SCHOTTKY 5A 40V SMAF Comchip Technology |
2,090 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 500pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 5A | -55°C ~ 150°C | 550 mV @ 5 A | |
|
|
RH 1ZVDIODE GEN PURP 200V 600MA AXIAL Sanken |
2,712 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 5 µA @ 200 V | 200 V | 600mA | -40°C ~ 150°C | 1.3 V @ 600 mA | |
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|
AS1PG-M3/85ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
EGP10CDIODE GEN PURP 150V 1A DO204AL onsemi |
2,310 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
|
BYT52K-TAPDIODE AVALANCHE 800V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,681 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 800 V | 800 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
NA03HSA08DIODE SCHOTTKY 80V 3A DO-221BC KYOCERA AVX |
3,476 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 80 V | 80 V | 3A | -40°C ~ 150°C | 700 mV @ 3 A | |
|
|
RK 16VDIODE SCHOTTKY 60V 2A AXIAL Sanken |
2,339 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 60 V | 60 V | 2A | -40°C ~ 150°C | 690 mV @ 2 A | |
|
|
AS1PJ-M3/85ADIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,266 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
EGP10FDIODE GEN PURP 300V 1A DO41 onsemi |
3,311 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A | |
|
|
BYT53D-TAPDIODE AVALANCHE 200V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,759 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
