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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N647UR-1DIODE GEN PURP 400V 400MA DO213 Microchip Technology |
3,507 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 nA @ 400 V | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
CMR1U-01M BK PBFREEDIODE GEN PURP 100V 1A SMA Central Semiconductor Corp |
3,294 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 1 V @ 1 A | |
|
VS-6EWL06FNTRR-M3DIODE GEN PURP 600V 6A D-PAK Vishay General Semiconductor - Diodes Division |
3,948 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 70 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.25 V @ 6 A |
|
NTE6357R-600 PRV 300A ANODE CASE NTE Electronics, Inc |
2,311 | - |
RFQ |
데이터시트 |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 40 mA @ 600 V | 600 V | 300A | -40°C ~ 180°C | - | |
|
RB531SM-40FHT2RRB531SM-40FH IS THE HIGH RELIABI Rohm Semiconductor |
3,189 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 100mA | 125°C (Max) | 610 mV @ 100 mA |
|
SI-A8000HV DIODE D55X23 24000V 1.8A Diotec Semiconductor |
3,100 | - |
RFQ |
데이터시트 |
Box | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 1.5 µs | 5 µA @ 24000 V | 24000 V | 1.8A | -50°C ~ 150°C | 15 V @ 2 A | |
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|
PMLL4153,115DIODE GEN PURP 50V 200MA LLDS Nexperia USA Inc. |
879 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 200mA (DC) | 200°C (Max) | 880 mV @ 50 mA | |
|
LSIC2SD170B50DIODE SIC SCHOTTKY 1700V 50A Littelfuse Inc. |
519 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 3900pF @ 1V, 1MHz | 0 ns | 100 µA @ 1700 V | 1700 V | 135A (DC) | -55°C ~ 175°C | 1.8 V @ 50 A | |
|
LL4151-GS18DIODE GEN PURP 50V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
669 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 300mA | 175°C (Max) | 1 V @ 50 mA |
|
NTE6359R-1000PRV 300A ANO CASE NTE Electronics, Inc |
3,166 | - |
RFQ |
데이터시트 |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 30 mA @ 1000 V | 1000 V | 300A | -40°C ~ 180°C | - | |
|
M1MA152KT1GDIODE GEN PURP 80V 100MA SC59 onsemi |
505 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 3 ns | 100 nA @ 75 V | 80 V | 100mA (DC) | 150°C (Max) | 1.2 V @ 100 mA | |
|
NTE6358R-1000PRV 300A CATH CASE NTE Electronics, Inc |
3,741 | - |
RFQ |
데이터시트 |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 30 mA @ 1000 V | 1000 V | 300A | -40°C ~ 180°C | - | |
|
|
RB540SM-40FHT2RRB540SM-40FH IS THE HIGH RELIABI Rohm Semiconductor |
182 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | - | 15 µA @ 40 V | 40 V | 200mA | 150°C (Max) | 710 mV @ 100 mA |
|
D629N44TPRRECTIFIER DIODE MODULE Rochester Electronics, LLC |
2,465 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
LL4150GS18DIODE GEN PURP 50V 600MA SOD80 Vishay General Semiconductor - Diodes Division |
3,145 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 600mA | -55°C ~ 175°C | 1 V @ 200 mA | |
|
NTE6363R-1400PRV 300A ANODE CASE NTE Electronics, Inc |
3,333 | - |
RFQ |
데이터시트 |
Bag | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 30 mA @ 1400 V | 1400 V | 300A | -40°C ~ 180°C | - | |
|
BAT54HMT116BAT54HM IS SCHOTTKY BARRIER DIOD Rohm Semiconductor |
1,105 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 12pF @ 1V, 1MHz | 50 ns | 2 µA @ 25 V | 30 V | 200mA | 150°C (Max) | 800 mV @ 100 mA | |
|
1N4045275A,50V-1400V RECTIFIER IN DO9 Microchip Technology |
3,492 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
TBAT54,LMDIODE SCHOTTKY 30V 140MA SOT23 Toshiba Semiconductor and Storage |
471 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | - | 1.5 ns | 2 µA @ 25 V | 30 V | 140mA | 150°C (Max) | 580 mV @ 100 mA | |
|
|
JTXV1N5822USSCHOTTKY SM DIODE 40V, 3A, /620 Semtech Corporation |
100 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A |
- 1500+ 일일 평균 RFQ
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- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
