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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NXPSC06650DJDIODE SCHOTTKY 650V 6A DPAK WeEn Semiconductors |
3,428 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
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NXPSC06650XQDIODE SCHOTTKY 650V 6A TO220F WeEn Semiconductors |
3,453 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 190pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 6A | 175°C (Max) | 1.7 V @ 6 A | |
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NXPSC08650BJDIODE SCHOTTKY 650V 8A D2PAK WeEn Semiconductors |
2,651 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
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NXPSC08650DJDIODE SCHOTTKY 650V 8A DPAK WeEn Semiconductors |
2,587 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
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NXPSC08650XQDIODE SCHOTTKY 650V 8A TO220F WeEn Semiconductors |
2,700 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
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NXPSC10650BJDIODE SCHOTTKY 650V 10A D2PAK WeEn Semiconductors |
2,676 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
|
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NXPSC10650DJDIODE SCHOTTKY 650V 10A DPAK WeEn Semiconductors |
2,313 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
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NXPSC10650XQDIODE SCHOTTKY 650V 10A TO220F WeEn Semiconductors |
3,233 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 250 µA @ 650 V | 650 V | 10A | 175°C (Max) | 1.7 V @ 10 A | |
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OF4487JOF4487 DPAK REEL 13" Q1 T1 WeEn Semiconductors |
2,141 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
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BYC30DW-600PQBYC30DW-600PQ/TO247/STANDARD MAR WeEn Semiconductors |
2,858 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 33 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 3.3 V @ 30 A | |
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BYC30W-600PT2QBYC30W-600PT2Q/TO247/STANDARD MA WeEn Semiconductors |
2,055 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 34 ns | 10 µA @ 600 V | 600 V | 30A | 175°C (Max) | 2.75 V @ 30 A | |
|
BYC8-1200PQBYC8-1200PQ/TO-220AC/STANDARD MA WeEn Semiconductors |
3,998 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 100 µA @ 1200 V | 1200 V | 8A | 175°C (Max) | 3.2 V @ 8 A | |
|
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BYV40W-600PQBYV40W-600PQ/TO247/STANDARD MARK WeEn Semiconductors |
2,644 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 79 ns | 10 µA @ 600 V | 600 V | 40A | 175°C (Max) | 1.6 V @ 40 A | |
|
|
BYC15-1200PQBYC15-1200PQ/TO-220AC/STANDARD M WeEn Semiconductors |
3,737 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 61 ns | 100 µA @ 1200 V | 1200 V | 15A | 175°C (Max) | 3.2 V @ 15 A | |
|
BYR5D-1200PJBYR5D-1200PDPAK Q1 T1 STANDARD M WeEn Semiconductors |
2,867 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 62 ns | 50 µA @ 1200 V | 1200 V | 5A | 175°C (Max) | 2.2 V @ 5 A | |
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NXPSC04650DJDIODE SCHOTTKY 650V 4A DPAK WeEn Semiconductors |
2,274 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
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BYV10-600PQDIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors |
3,866 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
BYT79X-600PQDIODE GEN PURP 600V 15A TO220F WeEn Semiconductors |
4,670 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 10 µA @ 600 V | 600 V | 15A | 175°C (Max) | 1.38 V @ 15 A | |
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WNSC2D08650TJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 8A | 175°C | 1.7 V @ 8 A | |
|
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BYC15-600PQDIODE GEN PURP 600V 15A TO220AC WeEn Semiconductors |
4,835 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 10 µA @ 600 V | 600 V | 15A | 175°C (Max) | 3.2 V @ 15 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
