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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYC58X-600,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
3,785 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 12.5 ns | 150 µA @ 600 V | 600 V | 8A | 150°C (Max) | 3.2 V @ 8 A | |
|
|
BYC8X-600P,127DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors |
3,214 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 20 µA @ 600 V | 600 V | 8A | 175°C (Max) | 1.9 V @ 8 A | |
|
|
BYC20X-600,127DIODE GEN PURP 500V 20A TO220FP WeEn Semiconductors |
3,803 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 200 µA @ 600 V | 500 V | 20A | 150°C (Max) | 2.9 V @ 20 A | |
|
|
BYC15X-600PQDIODE GEN PURP 600V 15A TO220F WeEn Semiconductors |
2,382 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 18 ns | 10 µA @ 600 V | 600 V | 15A | 175°C (Max) | 3.2 V @ 15 A | |
|
BYV29-600,127DIODE GEN PURP 600V 9A TO220AC WeEn Semiconductors |
2,655 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYR29-800,127DIODE GEN PURP 800V 8A TO220AC WeEn Semiconductors |
3,740 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 800 V | 800 V | 8A | 150°C (Max) | 1.5 V @ 8 A | |
|
|
BYW29E-150,127DIODE GEN PURP 150V 8A TO220AC WeEn Semiconductors |
2,999 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 150 V | 150 V | 8A | 150°C (Max) | 1.05 V @ 8 A | |
|
|
BYV29-500,127DIODE GEN PURP 500V 9A TO220AC WeEn Semiconductors |
4,999 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 500 V | 500 V | 9A | 150°C (Max) | 1.25 V @ 8 A | |
|
|
BYV29X-600,127DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors |
1,030 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 9A | 150°C (Max) | 1.26 V @ 8 A | |
|
|
NXPSC046506QDIODE SCHOTTKY 650V 4A TO220AC WeEn Semiconductors |
20,200 | - |
RFQ |
데이터시트 |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
BYV25FD-600,118DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors |
7,500 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.9 V @ 5 A | |
|
|
BYV25D-600,118DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors |
7,495 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 50 µA @ 600 V | 600 V | 5A | 150°C (Max) | 1.3 V @ 5 A | |
|
|
BYT79X-600,127DIODE GEN PURP 600V 15A TO220F WeEn Semiconductors |
4,451 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 60 ns | 50 µA @ 600 V | 600 V | 15A | 150°C (Max) | 1.38 V @ 15 A | |
|
WNSC2D04650DJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
6,500 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 125pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A | 175°C | 1.7 V @ 4 A | |
|
|
WNSC2D04650TJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,000 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 125pF @ 1V, 1MHz | 0 ns | 20 µA @ 650 V | 650 V | 4A | 175°C | 1.7 V @ 4 A | |
|
|
BYC8-600,127DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors |
4,986 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 52 ns | 150 µA @ 600 V | 600 V | 8A | 150°C (Max) | 2.9 V @ 8 A | |
|
NXPSC04650B6JDIODE SCHOTTKY 650V 4A D2PAK WeEn Semiconductors |
3,180 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 130pF @ 1V, 1MHz | 0 ns | 170 µA @ 650 V | 650 V | 4A | 175°C (Max) | 1.7 V @ 4 A | |
|
|
MURS160BJULTRAFAST POWER DIODE WeEn Semiconductors |
7,616 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | 175°C (Max) | 1.25 V @ 1 A | |
|
|
BYC20DX-600PQDIODE GEN PURP 600V 20A TO220F WeEn Semiconductors |
4,992 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 10 µA @ 600 V | 600 V | 20A | 175°C (Max) | 2.9 V @ 20 A | |
|
|
BYC10B-600,118DIODE GEN PURP 500V 10A D2PAK WeEn Semiconductors |
3,407 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 55 ns | 200 µA @ 600 V | 500 V | 10A | 150°C (Max) | 2.9 V @ 10 A |
- 1500+ 일일 평균 RFQ
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- 15,000+ 재고 창고
