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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4934GHR0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,420 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
1N5401GHA0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
3,392 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
|
|
1N4935G R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,972 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
1N5402G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,702 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
1N4935GHR0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,908 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
1N5402GHA0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,223 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
FR101G R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
2,524 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
1N5404G A0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,228 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
FR102G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,604 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
|
1N5404GHA0GDIODE GEN PURP 400V 3A DO201AD Taiwan Semiconductor Corporation |
2,793 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
HER101G R0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,233 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N5406GHA0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
3,728 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
HER102G R0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,612 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N5407GHA0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
2,863 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
HER103G R0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,565 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
|
|
1N5408GHA0GDIODE GEN PURP 3A DO201AD Taiwan Semiconductor Corporation |
2,761 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | - | 5 µA @ 1000 V | - | 3A | -55°C ~ 150°C | 1 V @ 3 A |
|
|
MUR190A R0GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
2,388 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A | |
|
|
1N5820 A0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
3,071 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 475 mV @ 3 A | |
|
|
MUR190AHR0GDIODE GEN PURP 900V 1A DO204AL Taiwan Semiconductor Corporation |
3,016 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 900 V | 900 V | 1A | -55°C ~ 175°C | 1.7 V @ 1 A |
|
|
1N5820HA0GDIODE SCHOTTKY 20V 3A DO201AD Taiwan Semiconductor Corporation |
2,609 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 200pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 475 mV @ 3 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
