사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SFA805GHC0GDIODE GEN PURP 300V 8A TO220AC Taiwan Semiconductor Corporation |
3,743 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SFA806G C0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
3,170 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A | |
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SFA806GHC0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
2,530 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.3 V @ 8 A |
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SFA807G C0GDIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation |
3,550 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
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SFA807GHC0GDIODE GEN PURP 500V 8A TO220AC Taiwan Semiconductor Corporation |
2,675 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
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SFA808GHC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,875 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A |
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SFAF1001G C0GDIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A | |
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SFAF1001GHC0GDIODE GEN PURP 50V 10A ITO220AC Taiwan Semiconductor Corporation |
2,549 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 170pF @ 4V, 1MHz | 35 ns | 10 µA @ 50 V | 50 V | 10A | -55°C ~ 150°C | 975 mV @ 10 A |
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UF1MHB0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
2,751 | - |
RFQ |
![]() 데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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S4J V7GDIODE GEN PURP 600V 4A DO214AB Taiwan Semiconductor Corporation |
1,428 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
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S4B V7GDIODE GEN PURP 100V 4A DO214AB Taiwan Semiconductor Corporation |
1,402 | - |
RFQ |
![]() 데이터시트 |
Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
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S4M V7GDIODE GEN PURP 1KV 4A DO214AB Taiwan Semiconductor Corporation |
17,000 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 1000 V | 1000 V | 4A | -55°C ~ 150°C | 1.15 V @ 4 A | |
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UF4001 B0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,264 | - |
RFQ |
![]() 데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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UF4001HB0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,257 | - |
RFQ |
![]() 데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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UF4002 B0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,990 | - |
RFQ |
![]() 데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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UF4002HB0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
2,100 | - |
RFQ |
![]() 데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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UF4003 B0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,986 | - |
RFQ |
![]() 데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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UF4003HB0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,832 | - |
RFQ |
![]() 데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
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UF4004 B0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,942 | - |
RFQ |
![]() 데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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UF4004HB0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,401 | - |
RFQ |
![]() 데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |