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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISL9R1560G2-F085RECTIFIER DIODE, AVALANCHE, 15A, Rochester Electronics, LLC |
3,179 | - |
RFQ |
데이터시트 |
Bulk | Automotive, AEC-Q101, Stealth™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 2.2 V @ 15 A |
|
SB540RECTIFIER DIODE, SCHOTTKY, 5A, 4 Rochester Electronics, LLC |
3,534 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -50°C ~ 150°C | 550 mV @ 5 A | |
|
S3DBRECTIFIER DIODE, 3A, 200V, DO-21 Rochester Electronics, LLC |
3,824 | - |
RFQ |
데이터시트 |
Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 3 A |
|
PMEG100V060ELPD139NOW NEXPERIA PMEG100V060ELPD - R Rochester Electronics, LLC |
2,856 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
IDH04S60CAKSA1DIODE SCHOTTKY 600V 4A TO220-2 Rochester Electronics, LLC |
29,279 | - |
RFQ |
데이터시트 |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 130pF @ 1V, 1MHz | 0 ns | 50 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 175°C | 1.9 V @ 4 A |
|
|
IDH06S60CAKSA1DIODE SCHOTTKY 600V 6A TO220-2 Rochester Electronics, LLC |
9,733 | - |
RFQ |
데이터시트 |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 280pF @ 1V, 1MHz | 0 ns | 80 µA @ 600 V | 600 V | 6A (DC) | -55°C ~ 175°C | 1.7 V @ 6 A |
|
|
IDH08S60CAKSA1DIODE SCHOTTKY 600V 8A TO220-2 Rochester Electronics, LLC |
2,354 | - |
RFQ |
데이터시트 |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 310pF @ 1V, 1MHz | 0 ns | 100 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
|
IDH10S60CAKSA1DIODE SCHOTTKY 600V 10A TO220-2 Rochester Electronics, LLC |
7,460 | - |
RFQ |
데이터시트 |
Bulk,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 480pF @ 1V, 1MHz | 0 ns | 140 µA @ 600 V | 600 V | 10A (DC) | -55°C ~ 175°C | 1.7 V @ 10 A |
|
|
SDT05S60DIODE SCHOTTKY 600V 5A TO220-2 Rochester Electronics, LLC |
1,500 | - |
RFQ |
데이터시트 |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 170pF @ 1V, 1MHz | 0 ns | 200 µA @ 600 V | 600 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
|
SDT08S60DIODE SCHOTTKY 600V 8A TO220-2 Rochester Electronics, LLC |
348 | - |
RFQ |
데이터시트 |
Tube,Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 280pF @ 0V, 1MHz | 0 ns | 300 µA @ 600 V | 600 V | 8A (DC) | -55°C ~ 175°C | 1.7 V @ 8 A |
|
FFP08D60L2RECTIFIER DIODE, AVALANCHE, 8A, Rochester Electronics, LLC |
3,796 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 10 µA @ 600 V | 600 V | 8A | -65°C ~ 150°C | 3.6 V @ 8 A | |
|
RUR1S1560S9A15A, 600V, ULTRAFAST DIODE Rochester Electronics, LLC |
3,301 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 100 µA @ 600 V | 600 V | 15A | -55°C ~ 175°C | 1.5 V @ 15 A | |
|
MUR180EDIODE GEN PURP 800V 1A AXIAL Rochester Electronics, LLC |
22,000 | - |
RFQ |
데이터시트 |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.75 V @ 1 A |
|
MUR405DIODE GEN PURP 50V 4A DO201AD Rochester Electronics, LLC |
2,694 | - |
RFQ |
데이터시트 |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 50 V | 50 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
MUR415DIODE GEN PURP 150V 4A DO201AD Rochester Electronics, LLC |
3,807 | - |
RFQ |
데이터시트 |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 5 µA @ 150 V | 150 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A |
|
|
MUR480EDIODE GEN PURP 800V 4A DO201AD Rochester Electronics, LLC |
18,030 | - |
RFQ |
데이터시트 |
Bulk,Bulk | SWITCHMODE™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 100 ns | 25 µA @ 800 V | 800 V | 4A | -65°C ~ 175°C | 1.85 V @ 4 A |
|
SR4475R1REC AXIAL SPECIAL STD Rochester Electronics, LLC |
9,995 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
A115ARECTIFIER DIODE, 3A, 100V Rochester Electronics, LLC |
1,640 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | - | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 150 µs | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
IDH05G65C5XKSA2IDH05G65 - 600 V SILICION CARBID Rochester Electronics, LLC |
3,878 | - |
RFQ |
데이터시트 |
Bulk | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 160pF @ 1V, 1MHz | 0 ns | 90 µA @ 650 V | 650 V | 5A (DC) | -55°C ~ 175°C | 1.7 V @ 5 A |
|
MURS140T3DIODE ULTRA FAST 1A 400V SMB Rochester Electronics, LLC |
3,659 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 400 V | 400 V | 2A | - | 1.25 V @ 1 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
