| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | Voltage-OffState | Voltage-GateTrigger(Vgt)(Max) | Current-GateTrigger(Igt)(Max) | Voltage-OnState(Vtm)(Max) | Current-OnState(It(AV))(Max) | Current-OnState(It(RMS))(Max) | Current-Hold(Ih)(Max) | Current-OffState(Max) | Current-NonRepSurge5060Hz(Itsm) | SCRType | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SOT223-1.jpg)  | BT148W-600R,115SCR 600V 1A SC73WeEn Semiconductors | 3,235 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 600 V | 1.5 V | 200 µA | 1.5 V | 600 mA | 1 A | 6 mA | 500 µA | 10A, 11A | Sensitive Gate | -40°C ~ 125°C | Surface Mount | 
|   | BT149D,112SCR 400V 800MA TO92-3WeEn Semiconductors | 2,141 | - | RFQ |   데이터시트 | Bulk | - | Active | 400 V | 800 mV | 200 µA | 1.7 V | 500 mA | 800 mA | 5 mA | 100 µA | 8A, 9A | Sensitive Gate | 125°C (TJ) | Through Hole | 
|   | BT155Z-1200TQSCR 1.2KV 79A TO3PWeEn Semiconductors | 3,492 | - | RFQ |   데이터시트 | Tube | - | Active | 1.2 kV | 1 V | 50 mA | 1.5 V | 50 A | 79 A | 200 mA | 3 mA | 650A, 715A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN80W-1600TQSCR 1.6KV 126A TO247-3WeEn Semiconductors | 2,301 | - | RFQ |   데이터시트 | Tube | - | Active | 1.6 kV | 1 V | 80 mA | 1.47 V | 80 A | 126 A | 200 mA | 10 mA | 850A, 930A | Standard Recovery | 150°C (TJ) | Through Hole | 
| SOT223-1.jpg)  | MCR08BT1,115SCR 200V 800MA SC73WeEn Semiconductors | 3,245 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 200 V | 800 mV | 200 µA | 1.7 V | 500 mA | 800 mA | 5 mA | 100 µA | 8A, 9A | Sensitive Gate | -40°C ~ 125°C | Surface Mount | 
| SOT223-1.jpg)  | BT168GWF,115SCR 600V 1A SC73WeEn Semiconductors | 3,136 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 600 V | 800 mV | 450 µA | 1.7 V | 630 mA | 1 A | 10 mA | 100 µA | 8A, 9A | Sensitive Gate | - | Surface Mount | 
|   | BT258-600R,127SCR 600V 8A TO220ABWeEn Semiconductors | 3,732 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1.5 V | 200 µA | 1.6 V | 5 A | 8 A | 6 mA | 500 µA | 75A, 82A | Sensitive Gate | -40°C ~ 125°C | Through Hole | 
|   | TYN30Y-800TQSCR 800V 30A IITO220EWeEn Semiconductors | 3,666 | - | RFQ |   데이터시트 | Tube | - | Active | 800 V | 1 V | 15 mA | 1.5 V | 19 A | 30 A | 60 mA | 1 mA | 350A, 385A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | BT151-650LTFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,848 | - | RFQ |   데이터시트 | Tube | - | Active | 650 V | 1 V | 5 mA | 1.5 V | 7.5 A | 12 A | 20 mA | 10 µA | 120A, 132A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | BT151Y-650LTFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 2,244 | - | RFQ |   데이터시트 | Tube | - | Active | 650 V | 1 V | 5 mA | 1.5 V | 7.5 A | 12 A | 20 mA | 10 µA | 120A, 132A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN16-600CTFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,739 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.6 V | 10.2 A | 16 A | 40 mA | 10 µA | 188A, 207A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN16Y-600CTFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 2,639 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.6 V | 10.2 A | 16 A | 40 mA | 10 µA | 188A, 207A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN20-600TFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,964 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.6 V | 12.7 A | 20 A | 40 mA | 10 µA | 225A, 248A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN20Y-600TFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,133 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.6 V | 12.7 A | 20 A | 40 mA | 10 µA | 225A, 248A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN30-600TFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,849 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.5 V | 19 A | 30 A | 40 mA | 10 µA | 360A, 396A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | TYN30Y-600TFQPLANAR PASSIVATED SILICON CONTROWeEn Semiconductors | 3,845 | - | RFQ |   데이터시트 | Tube | - | Active | 600 V | 1 V | 10 mA | 1.5 V | 19 A | 30 A | 40 mA | 10 µA | 360A, 396A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | BT158W-1200TQSCR 1.2KV 126A TO247-3WeEn Semiconductors | 3,678 | - | RFQ |   데이터시트 | Tube | - | Active | 1.2 kV | 1 V | 70 mA | 1.65 V | 80 A | 126 A | 200 mA | 3 mA | 1100A, 1210A | Standard Recovery | 150°C (TJ) | Through Hole | 
|   | BT169HMLSCR 800V 800MA TO92-3WeEn Semiconductors | 2,640 | - | RFQ |   데이터시트 | Tape & Box (TB) | - | Active | 800 V | 800 mV | 100 µA | 1.7 V | 500 mA | 800 mA | 3 mA | 100 µA | 9A, 10A | Sensitive Gate | 125°C (TJ) | Through Hole | 
|   | BT169G-MQPSCR 600V 800MA TO92-3WeEn Semiconductors | 2,557 | - | RFQ |   데이터시트 | Tape & Reel (TR) | - | Active | 600 V | 800 mV | 60 µA | 1.7 V | 500 mA | 800 mA | 5 mA | 100 µA | 9A, 10A | Sensitive Gate | 125°C (TJ) | Through Hole | 
|   | BT169DEPSCR 400V 800MA TO92-3WeEn Semiconductors | 2,863 | - | RFQ |   데이터시트 | Bulk | - | Active | 400 V | 800 mV | 200 µA | 1.7 V | 500 mA | 800 mA | 5 mA | 100 µA | 8A, 9A | Sensitive Gate | 125°C (TJ) | Through Hole |