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트랜지스터 - 바이폴라(BJT) - 단일, 사전 바이어스
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | TransistorType | Current-Collector(Ic)(Max) | Voltage-CollectorEmitterBreakdown(Max) | Resistor-Base(R1) | Resistor-EmitterBase(R2) | DCCurrentGain(hFE)(Min)@IcVce | VceSaturation(Max)@IbIc | Current-CollectorCutoff(Max) | Frequency-Transition | Power-Max | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RN1310,LXHFAUTO AEC-Q NPN BRT, Q1BSR=4.7K Toshiba Semiconductor and Storage |
3,391 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 250 MHz | 100 mW | Surface Mount | |
|
|
RN2308,LXHFAUTO AEC-Q TR PNP BRT, Q1BSR=22K Toshiba Semiconductor and Storage |
2,318 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 22 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 100 mW | Surface Mount | |
|
|
RN2304,LXHFAUTO AEC-Q TR PNP BRT, Q1BSR=47K Toshiba Semiconductor and Storage |
3,950 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 100 mW | Surface Mount | |
|
|
RN2316,LXHFAUTO AEC-Q TR PNP BRT, Q1BSR=4.7 Toshiba Semiconductor and Storage |
2,792 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 100 mW | Surface Mount | |
|
|
RN2309,LXHFAUTO AEC-Q TR PNP BRT, Q1BSR=47K Toshiba Semiconductor and Storage |
2,113 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 47 kOhms | 22 kOhms | 70 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 200 MHz | 100 mW | Surface Mount | |
|
|
RN2311,LXHFAUTO AEC-Q TR PNP BRT, Q1BSR=10K Toshiba Semiconductor and Storage |
2,190 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 10 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200 MHz | 100 mW | Surface Mount | |
|
|
RN2310,LXHFAUTO AEC-Q SINGLE PNP , R1=4.7KO Toshiba Semiconductor and Storage |
2,611 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | PNP - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | - | 120 @ 1mA, 5V | 300mV @ 250µA, 5mA | 100nA (ICBO) | 200 MHz | 100 mW | Surface Mount | |
|
|
RN1308,LXHFAUTO AEC-Q SINGLE NPN , R1=22KOH Toshiba Semiconductor and Storage |
2,482 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | NPN - Pre-Biased | 100 mA | 50 V | 22 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250 MHz | 100 mW | Surface Mount | |
|
DTB123TCHZGT116DTB123TCHZG IS THE HIGH RELIABIL Rohm Semiconductor |
2,580 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | PNP - Pre-Biased | 500 mA | 40 V | 2.2 kOhms | - | 100 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA (ICBO) | 200 MHz | 200 mW | Surface Mount | |
|
|
DTB114GCHZGT116DTB114GCHZG IS THE HIGH RELIABIL Rohm Semiconductor |
3,452 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | PNP - Pre-Biased | 500 mA | 50 V | - | 10 kOhms | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA (ICBO) | 200 MHz | 200 mW | Surface Mount | |
|
KSR1101MTFSMALL SIGNAL BIPOLAR TRANSISTOR Fairchild Semiconductor |
3,521 | - |
RFQ |
데이터시트 |
Bulk | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 4.7 kOhms | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250 MHz | 200 mW | Surface Mount |
|
DTC144EET1HSS BIAS RES TRANS onsemi |
3,248 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|
DTD743XETLTRANS PREBIAS NPN 150MW EMT3 Rohm Semiconductor |
3,679 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN - Pre-Biased | 200 mA | 30 V | 4.7 kOhms | 10 kOhms | 140 @ 100mA, 2V | 300mV @ 2.5mA, 50mA | 500nA | 260 MHz | 150 mW | Surface Mount |
|
|
GN1L4M-T2-ASMALL SIGNAL BIPOLAR TRANSISTOR Renesas Electronics America Inc |
2,651 | - |
RFQ |
데이터시트 |
Bulk | - | Obsolete | PNP - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 95 @ 50mA, 5V | 200mV @ 250µA, 5mA | 100nA (ICBO) | - | 150 mW | Surface Mount |
|
|
GA1L4M-T2-ASMALL SIGNAL BIPOLAR TRANSISTOR Renesas Electronics America Inc |
2,215 | - |
RFQ |
데이터시트 |
Bulk | - | Obsolete | NPN - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 95 @ 50mA, 5V | 200mV @ 250µA, 5mA | 100nA (ICBO) | - | 150 mW | Surface Mount |
|
DDTC144ELP-7TRANS PREBIAS NPN 250MW 3DFN Diodes Incorporated |
3,125 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 47 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA (ICBO) | 250 MHz | 250 mW | Surface Mount |
|
NTE2417T-PNP SI WITH 22K RES NTE Electronics, Inc |
2,977 | - |
RFQ |
데이터시트 |
Bag | - | Active | PNP - Pre-Biased | 100 mA | 50 V | 22 kOhms | 22 kOhms | 50 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 200 MHz | 200 mW | Surface Mount |
|
NTE2367T-NPN SI DIGITAL 4.7K NTE Electronics, Inc |
3,511 | - |
RFQ |
데이터시트 |
Bag | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250 MHz | 300 mW | Through Hole |
|
NTE2414T-NPN SI WITH 10K RES NTE Electronics, Inc |
2,624 | - |
RFQ |
데이터시트 |
Bag | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 200 mW | Surface Mount |
|
NTE2355T-NPN SI W/10K RESISTOR NTE Electronics, Inc |
2,588 | - |
RFQ |
데이터시트 |
Bag | - | Active | NPN - Pre-Biased | 100 mA | 50 V | 10 kOhms | 10 kOhms | 50 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250 MHz | 300 mW | Through Hole |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
