| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | FETFeature | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | InputCapacitance(Ciss)(Max)@Vds | Power-Max | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | QS8J2TRMOSFET 2P-CH 12V 4A TSMT8Rohm Semiconductor | 3,843 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 P-Channel (Dual) | Logic Level Gate, 1.5V Drive | 12V | 4A | 36mOhm @ 4A, 4.5V | 1V @ 1mA | 20nC @ 4.5V | 1940pF @ 6V | 550mW | 150°C (TJ) | Surface Mount | 
|   | SIZ998BDT-T1-GE3DUAL N-CHANNEL 30-V (D-S) MOSFETVishay Siliconix | 3,974 | - | RFQ | Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | 2 N-Channel (Dual), Schottky | Standard | 30V | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V | 2.2V @ 250µA | 18nC @ 10V, 46.7nC @ 10V | 790pF @ 15V, 2130pF @ 15V | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|   | DMTH4011SPDQ-13MOSFETDUAL N-CHANPOWERDI5060-8Diodes Incorporated | 2,338 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | 2 N-Channel (Dual) | Standard | 40V | 11.1A (Ta), 42A (Tc) | 15mOhm @ 20A, 10V | 4V @ 250µA | 10.6nC @ 10V | 805pF @ 20V | 2.6W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | SIZ710DT-T1-GE3MOSFET 2N-CH 20V 16A POWERPAIRVishay Siliconix | 3,771 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Half Bridge) | Logic Level Gate | 20V | 16A, 35A | 6.8mOhm @ 19A, 10V | 2.2V @ 250µA | 18nC @ 10V | 820pF @ 10V | 27W, 48W | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | TSM4936DCS RLGMOSFET 2 N-CH 30V 5.9A 8SOPTaiwan Semiconductor Corporation | 3,840 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) | Standard | 30V | 5.9A (Ta) | 36mOhm @ 5.9A, 10V | 3V @ 250µA | 13nC @ 10V | 610pF @ 15V | 3W | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | IPG20N04S412AATMA1MOSFET 2N-CH 40V 20A 8TDSONInfineon Technologies | 3,888 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | 2 N-Channel (Dual) | Standard | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | 1470pF @ 25V | 41W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 
|   | SI7900AEDN-T1-E3MOSFET 2N-CH 20V 6A 1212-8Vishay Siliconix | 3,921 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) Common Drain | Logic Level Gate | 20V | 6A | 26mOhm @ 8.5A, 4.5V | 900mV @ 250µA | 16nC @ 4.5V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | SI7922DN-T1-GE3MOSFET 2N-CH 100V 1.8A 1212-8Vishay Siliconix | 3,609 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 100V | 1.8A | 195mOhm @ 2.5A, 10V | 3.5V @ 250µA | 8nC @ 10V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount | 
|  | FDPC8013SMOSFET 2N-CH 30V 13A/26A 3.3MMonsemi | 3,942 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 13A, 26A | 6.4mOhm @ 13A, 10V | 3V @ 250µA | 13nC @ 10V | 827pF @ 15V | 800mW, 900mW | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FDMD8240LMOSFET 2N-CH 40V 23Aonsemi | 3,944 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | 2 N-Channel (Dual) | Standard | 40V | 23A | 2.6mOhm @ 23A, 10V | 3V @ 250µA | 56nC @ 10V | 4230pF @ 20V | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | ALD110900SALMOSFET 2N-CH 10.6V 8SOICAdvanced Linear Devices Inc. | 822 | - | RFQ |   데이터시트 | Tube | EPAD®, Zero Threshold™ | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 
|   | FDS6986SN-CHANNEL POWER MOSFETFairchild Semiconductor | 3,894 | - | RFQ |   데이터시트 | Bulk | PowerTrench® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6.5A, 7.9A | 29mOhm @ 6.5A, 10V, 20mOhm @ 7.9A, 10V | 3V @ 250µA, 3V @ 1mA | 9nC @ 5V, 16nC @ 5V | 695pF @ 10V, 1233pF @ 10V | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | NTD4906NAT4HNTD4906N - 30V, 54A, N-CHANNELonsemi | 3,640 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | 2SK2530-TL-E250V, N-CHANNEL AP LINEUPSanyo | 2,518 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | 2SK2530-TL-E-ON250V, N-CHANNEL AP LINEUPonsemi | 3,670 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | HUF76113DK8TN-CHANNEL POWER MOSFETFairchild Semiconductor | 2,798 | - | RFQ |   데이터시트 | Bulk | UltraFET® | Active | 2 N-Channel (Dual) | Logic Level Gate | 30V | 6A (Ta) | 32mOhm @ 6A, 10V | 3V @ 250µA | 19.2nC @ 10V | 605pF @ 25V | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FS10ASJ-3-T13#C01HIGH SPEED SWITCHING N-CHANNELRenesas Electronics America Inc | 2,977 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | FS10ASJ-3-T13#C02HIGH SPEED SWITCHING N-CHANNELRenesas Electronics America Inc | 2,491 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | 2SK3436-TL-E-ONN-CHANNEL SILICON MOSFETonsemi | 3,523 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | |
|   | 2SK3436-TL-EN-CHANNEL SILICON MOSFETSanyo | 2,141 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - |