| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | TransistorType | Frequency | Gain | Voltage-Test | CurrentRating(Amps) | NoiseFigure | Current-Test | Power-Output | Voltage-Rated | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | UPA608T-T1-ASMALL SIGNAL FETRenesas Electronics America Inc | 3,025 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | 2SJ562-TD-EPCH 2.5V DRIVE SERIESonsemi | 2,657 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | 2SK3291-TD-ENCH 4V DRIVE SERIESonsemi | 2,209 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | VEC2301-TL-EPCH+PCH 2.5V DRIVE SERIESonsemi | 3,075 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | MCH3416-TL-ENCH 4V DRIVE SERIESonsemi | 2,748 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | BLF8G22LS-270URF FET LDMOS 65V 17.7DB SOT502BAmpleon USA Inc. | 2,763 | - | RFQ |   데이터시트 | Tray | - | Last Time Buy | LDMOS | 2.11GHz ~ 2.17GHz | 17.7dB | 28 V | - | - | 2.4 A | 80W | 65 V | 
|   | C4H27W400AVYC4H27W400AVY/SOT1275/REELDAmpleon USA Inc. | 3,208 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) Common Source | 2.3GHz ~ 2.7GHz | 15dB | 50 V | - | - | 200 mA | 400W | 150 V | 
|   | A2G35S200-01SR3AIRFAST RF POWER GAN TRANSISTORNXP USA Inc. | 160 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | GaN HEMT | 3.4GHz ~ 3.6GHz | 16.1dB | 48 V | - | - | 291 mA | 180W | 125 V | 
|   | C4H22W500AYC4H22W500AY/SOT1273/REELDAmpleon USA Inc. | 3,978 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Active | 2 N-Channel (Dual) Common Source | 2.11GHz ~ 2.17GHz | 16dB | 50 V | - | - | 450 mA | 500W | 150 V | 
|   | A2T26H300-24SR6IC TRANS RF LDMOSNXP USA Inc. | 2,795 | - | RFQ |   데이터시트 | Tape & Reel (TR),Cut Tape (CT) | - | Obsolete | LDMOS (Dual) | 2.5GHz | 14.5dB | 28 V | - | - | 800 mA | 60W | 65 V | 
|   | MRF8P9040NR1RF POWER FIELD-EFFECT TRANSISTORFreescale Semiconductor | 344 | - | RFQ |   데이터시트 | Bulk | - | Active | LDMOS (Dual) | 960MHz | 19.1dB | 28 V | - | - | 320 mA | 4W | 70 V | 
|   | A2I25D025NR1A2I25D025 - AIRFAST RF POWER LDMNXP Semiconductors | 2,514 | - | RFQ | Bulk | - | Obsolete | LDMOS (Dual) | 2.1GHz ~ 2.9GHz | 31.9dB | 28 V | 10µA | - | 157 mA | 3.2W | 65 V | |
|   | MMRF1304NR1MMRF1304 - WIDEBAND RF POWER LDMNXP Semiconductors | 462 | - | RFQ | Bulk | - | Obsolete | LDMOS | 1.8MHz ~ 2GHz | 25.4dB | 50 V | 7µA | - | 10 mA | 25W | 133 V | |
|   | BLM7G1822S-20PBYBLM7G1822S-20PB - LDMOS 2-STAGENXP Semiconductors | 2,327 | - | RFQ |   데이터시트 | Bulk | * | Active | - | - | - | - | - | - | - | - | - | 
|   | MW7IC2040NR1NARROW BAND HIGH POWER AMPLIFIERNXP Semiconductors | 438 | - | RFQ | Bulk | - | Obsolete | LDMOS (Dual) | 1.99GHz ~ 1.93GHz, 1.88GHz ~ 1.805GHz | 32dB | 28 V | 10µA | - | 330 mA | 4W | 65 V | |
|   | NE3520S03-T1C-ARF K BAND, GALLIUM ARSENIDE, N-CRenesas Electronics America Inc | 2,094 | - | RFQ |   데이터시트 | Bulk | - | Active | HFET | 20GHz | 13.5dB | 2 V | 70mA | - | - | - | 4 V | 
|   | FW363-TL-EPCH+NCH 4V DRIVE SERIESonsemi | 3,487 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | 2SK2617ALS-CB11NCH 15V DRIVE SERIESonsemi | 3,153 | - | RFQ |   데이터시트 | Bulk | * | Active | - | - | - | - | - | - | - | - | - | 
|   | 2SK1645V-03-TR-EGAAS MESFET 0.1A 6Vonsemi | 3,304 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | |
|   | 2SK1420-SSO-UR10NCH 10V DRIVE SERIESonsemi | 3,060 | - | RFQ |   데이터시트 | Bulk | * | Active | - | - | - | - | - | - | - | - | - |