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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHFR1N60A-GE3MOSFET N-CH 600V 1.4A TO252AA Vishay Siliconix |
2,014 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 229 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF630STRRPBFMOSFET N-CH 200V 9A D2PAK Vishay Siliconix |
3,172 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 3W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4630DY-T1-E3MOSFET N-CH 25V 40A 8SO Vishay Siliconix |
2,149 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 161 nC @ 10 V | ±16V | 6670 pF @ 15 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF530STRRPBFMOSFET N-CH 100V 14A TO263 Vishay Siliconix |
2,998 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 160mOhm @ 8.4A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 670 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHU5N50D-GE3MOSFET N-CH 500V 5.3A TO251 Vishay Siliconix |
3,808 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHJ6N65E-T1-GE3MOSFET N-CH 650V 5.6A PPAK SO-8 Vishay Siliconix |
3,531 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 5.6A (Tc) | 10V | 868mOhm @ 3A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 596 pF @ 100 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF820STRLPBFMOSFET N-CH 500V 2.5A D2PAK Vishay Siliconix |
3,285 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SUD35N10-26P-E3MOSFET N-CH 100V 35A TO252 Vishay Siliconix |
2,499 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 7V, 10V | 26mOhm @ 12A, 10V | 4.4V @ 250µA | 47 nC @ 10 V | ±20V | 2000 pF @ 12 V | - | 8.3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SI4490DY-T1-GE3MOSFET N-CH 200V 2.85A 8SO Vishay Siliconix |
2,598 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.85A (Ta) | 6V, 10V | 80mOhm @ 4A, 10V | 2V @ 250µA (Min) | 42 nC @ 10 V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR846ADP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix |
2,318 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 6V, 10V | 7.8mOhm @ 20A, 10V | 3V @ 250µA | 66 nC @ 10 V | ±20V | 2350 pF @ 50 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHD1K4N60E-GE3MOSFET N-CH 600V 4.2A TO252AA Vishay Siliconix |
3,307 | - |
RFQ |
데이터시트 |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.2A (Tc) | 10V | 1.45Ohm @ 500mA, 10V | 5V @ 250µA | 7.5 nC @ 10 V | ±30V | 172 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR680DP-T1-RE3MOSFET N-CH 80V 100A PPAK SO-8 Vishay Siliconix |
3,980 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 100A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 3.4V @ 250µA | 81 nC @ 7.5 V | ±20V | 5150 pF @ 40 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQJQ148E-T1_GE3MOSFET N-CH 40V 375A PPAK 8 X 8 Vishay Siliconix |
3,085 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 375A (Tc) | 10V | 1.6mOhm @ 20A, 10V | 3.5V @ 250µA | 86 nC @ 10 V | ±20V | 4930 pF @ 25 V | - | 325W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
SQD50N04-5M6L_GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
3,527 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2.5V @ 250µA | 75 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SQD50N04-4M5L_GE3MOSFET N-CH 40V 50A TO252AA Vishay Siliconix |
3,455 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 130 nC @ 10 V | ±20V | 5860 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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SIHD5N50D-E3MOSFET N-CH 500V 5.3A DPAK Vishay Siliconix |
3,319 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5.3A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 20 nC @ 10 V | ±30V | 325 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIDR140DP-T1-GE3MOSFET N-CH 25V 79A/100A PPAK Vishay Siliconix |
2,230 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 79A (Ta), 100A (Tc) | 4.5V, 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250µA | 170 nC @ 10 V | +20V, -16V | 8150 pF @ 10 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIR104DP-T1-RE3MOSFET N-CH 100V 18.3A/79A PPAK Vishay Siliconix |
2,778 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18.3A (Ta), 79A (Tc) | 7.5V, 10V | 6.4mOhm @ 15A, 10V | 3.5V @ 250µA | 84 nC @ 10 V | ±20V | 4230 pF @ 50 V | - | 5.4W (Ta), 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIDR390DP-T1-GE3MOSFET N-CH 30V 69.9A/100A PPAK Vishay Siliconix |
2,077 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 69.9A (Ta), 100A (Tc) | 4.5V, 10V | 0.8mOhm @ 20A, 10V | 2V @ 250µA | 153 nC @ 10 V | +20V, -16V | 10180 pF @ 15 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQJQ142E-T1_GE3MOSFET N-CH 40V 460A PPAK 8 X 8 Vishay Siliconix |
2,031 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 460A (Tc) | 10V | 1.24mOhm @ 20A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±20V | 6975 pF @ 25 V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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