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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHP12N60E-GE3MOSFET N-CH 600V 12A TO220AB Vishay Siliconix |
3,794 | - |
RFQ |
데이터시트 |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFD9220PBFMOSFET P-CH 200V 560MA 4DIP Vishay Siliconix |
2,516 | - |
RFQ |
데이터시트 |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHG11N80AE-GE3MOSFET N-CH 800V 8A TO247AC Vishay Siliconix |
2,640 | - |
RFQ |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 450mOhm @ 5.5A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±30V | 804 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
IRFBC40STRLPBFMOSFET N-CH 600V 6.2A D2PAK Vishay Siliconix |
2,355 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.7A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFI820GPBFMOSFET N-CH 500V 2.1A TO220-3 Vishay Siliconix |
2,808 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF840ALPBFMOSFET N-CH 500V 8A I2PAK Vishay Siliconix |
2,977 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8A (Tc) | 10V | 850mOhm @ 4.8A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1018 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRLI630GPBFMOSFET N-CH 200V 6.2A TO220-3 Vishay Siliconix |
2,460 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6.2A (Tc) | 4V, 5V | 400mOhm @ 3.7A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 1100 pF @ 25 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHF12N60E-E3MOSFET N-CH 600V 12A TO220 Vishay Siliconix |
3,250 | - |
RFQ |
데이터시트 |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SIHH180N60E-T1-GE3MOSFET N-CH 600V 19A PPAK 8 X 8 Vishay Siliconix |
3,496 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRFBC20SPBFMOSFET N-CH 600V 2.2A D2PAK Vishay Siliconix |
3,448 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHP21N60EF-BE3MOSFET N-CH 600V 21A TO220AB Vishay Siliconix |
3,790 | - |
RFQ |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
|
SUP50020E-GE3MOSFET N-CH 60V 120A TO220AB Vishay Siliconix |
3,046 | - |
RFQ |
데이터시트 |
Tube | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 7.5V, 10V | 2.4mOhm @ 30A, 10V | 4V @ 250µA | 128 nC @ 10 V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
SIHP14N50D-E3MOSFET N-CH 500V 14A TO220AB Vishay Siliconix |
2,320 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 400mOhm @ 7A, 10V | 5V @ 250µA | 58 nC @ 10 V | ±30V | 1144 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQJ456EP-T1_GE3MOSFET N-CH 100V 32A PPAK SO-8 Vishay Siliconix |
2,464 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 32A (Tc) | 6V, 10V | 26mOhm @ 9.3A, 10V | 3.5V @ 250µA | 63 nC @ 10 V | ±20V | 3342 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHA240N60E-GE3MOSFET N-CH 600V 12A TO220 Vishay Siliconix |
3,400 | - |
RFQ |
데이터시트 |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 240mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 783 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHA15N60E-E3MOSFET N-CH 600V 15A TO220 Vishay Siliconix |
2,544 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SUP70040E-GE3MOSFET N-CH 100V 120A TO220AB Vishay Siliconix |
3,478 | - |
RFQ |
데이터시트 |
Bulk | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 7.5V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 5100 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
SIHH14N65EF-T1-GE3MOSFET N-CH 650V 15A PPAK 8 X 8 Vishay Siliconix |
2,010 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 271mOhm @ 7A, 10V | 4V @ 250µA | 98 nC @ 10 V | ±30V | 1749 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF740ALPBFMOSFET N-CH 400V 10A I2PAK Vishay Siliconix |
2,056 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
SIHF15N60E-E3MOSFET N-CH 600V 15A TO220 Vishay Siliconix |
3,426 | - |
RFQ |
데이터시트 |
Bulk | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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