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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SI2312CDS-T1-BE3N-CHANNEL 20-V (D-S) MOSFET Vishay Siliconix |
2,453 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5A (Ta), 6A (Tc) | 1.8V, 4.5V | 31.8mOhm @ 5A, 4.5V | 1V @ 250µA | 18 nC @ 5 V | ±8V | 865 pF @ 10 V | - | 1.25W (Ta), 2.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2356DS-T1-BE3N-CHANNEL 40-V (D-S) MOSFET Vishay Siliconix |
3,221 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 3.2A (Ta), 4.3A (Tc) | 2.5V, 10V | 51mOhm @ 3.2A, 10V | 1.5V @ 250µA | 13 nC @ 10 V | ±12V | 370 pF @ 20 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1427EDH-T1-BE3MOSFET P-CH 20V 2A/2A SC70-6 Vishay Siliconix |
2,056 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta), 2A (Tc) | - | 64mOhm @ 3A, 4.5V | 1V @ 250µA | 21 nC @ 8 V | ±8V | - | - | 1.56W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1424EDH-T1-BE3MOSFET N-CH 20V 4A/4A SC70-6 Vishay Siliconix |
2,709 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta), 4A (Tc) | - | 33mOhm @ 5A, 4.5V | 1V @ 250µA | 18 nC @ 8 V | ±8V | - | - | 1.56W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2305CDS-T1-BE3P-CHANNEL 8-V (D-S) MOSFET Vishay Siliconix |
2,765 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 4.4A (Ta), 5.8A (Tc) | 1.8V, 4.5V | 35mOhm @ 4.4A, 4.5V | 1V @ 250µA | 30 nC @ 8 V | ±8V | 960 pF @ 4 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1317DL-T1-BE3MOSFET P-CH 20V 1.4A/1.4A SC70-3 Vishay Siliconix |
3,037 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.4A (Ta), 1.4A (Tc) | - | 150mOhm @ 1.4A, 4.5V | 800mV @ 250µA | 6.5 nC @ 4.5 V | ±8V | 272 pF @ 10 V | - | 400mW (Ta), 500mW (Tc) | -50°C ~ 150°C (TJ) | Surface Mount |
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SI2301BDS-T1-BE3P-CHANNEL 2.5-V (G-S) MOSFET Vishay Siliconix |
3,955 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250µA | 10 nC @ 4.5 V | ±8V | 375 pF @ 6 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI3440ADV-T1-BE3N-CHANNEL 150-V (D-S) MOSFET Vishay Siliconix |
3,812 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1.6A (Ta), 2.2A (Tc) | 7.5V, 10V | 380mOhm @ 1.5A, 10V | 4V @ 250µA | 4 nC @ 10 V | ±20V | 80 pF @ 75 V | - | 2W (Ta), 3.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2300DS-T1-BE3N-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix |
2,052 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta), 3.6A (Tc) | 2.5V, 4.5V | 68mOhm @ 2.9A, 4.5V | 1.5V @ 250µA | 10 nC @ 10 V | ±12V | 320 pF @ 15 V | - | 1.1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI3483CDV-T1-BE3P-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix |
2,826 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.1A (Ta), 8A (Tc) | 4.5V, 10V | 34mOhm @ 6.1A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1000 pF @ 15 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1072X-T1-GE3MOSFET N-CH 30V SC89-6 Vishay Siliconix |
2,575 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 4.5V, 10V | 93mOhm @ 1.3A, 10V | 3V @ 250µA | 8.3 nC @ 10 V | ±20V | 280 pF @ 15 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1058X-T1-GE3MOSFET N-CH 20V SC89-6 Vishay Siliconix |
3,766 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.3A (Ta) | 2.5V, 4.5V | 91mOhm @ 1.3A, 4.5V | 1.55V @ 250µA | 5.9 nC @ 5 V | ±12V | 380 pF @ 10 V | - | 236mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2387DS-T1-GE3P-CHANNEL -80V SOT-23, 164 M @ 1 Vishay Siliconix |
2,967 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 2.1A (Ta), 3A (Tc) | 4.5V, 10V | 164mOhm @ 2.1A, 10V | 2.5V @ 250µA | 10.2 nC @ 10 V | ±20V | 395 pF @ 40 V | - | 1.3W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI1401EDH-T1-BE3MOSFET P-CH 12V 4A/4A SC70-6 Vishay Siliconix |
2,468 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Ta), 4A (Tc) | - | 34mOhm @ 5.5A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±10V | - | - | 1.6W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2367DS-T1-BE3P-CHANNEL 20-V (D-S) MOSFET Vishay Siliconix |
3,144 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.8A (Ta), 3.8A (Tc) | 1.8V, 4.5V | 66mOhm @ 2.5A, 4.5V | 1V @ 250µA | 23 nC @ 8 V | ±8V | 561 pF @ 10 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2369DS-T1-BE3P-CHANNEL 30-V (D-S) MOSFET Vishay Siliconix |
2,296 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.4A (Ta), 7.6A (Tc) | 4.5V, 10V | 29mOhm @ 5.4A, 10V | 2.5V @ 250µA | 36 nC @ 10 V | ±20V | 1295 pF @ 15 V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI2333DDS-T1-BE3P-CHANNEL 12-V (D-S) MOSFET Vishay Siliconix |
2,257 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 5A (Ta), 6A (Tc) | 1.5V, 4.5V | 28mOhm @ 5A, 4.5V | 1V @ 250µA | 35 nC @ 8 V | ±8V | 1275 pF @ 6 V | - | 1.2W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQA470CEJW-T1_GE3AUTOMOTIVE N-CHANNEL 30 V (D-S) Vishay Siliconix |
3,910 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.25A (Tc) | 2.5V, 4.5V | 65mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±12V | 440 pF @ 20 V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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SI2377EDS-T1-BE3P-CHANNEL 20-V (D-S) MOSFET Vishay Siliconix |
2,921 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.7A (Ta), 4.4A (Tc) | 1.5V, 4.5V | 61mOhm @ 3.2A, 4.5V | 1V @ 250µA | 21 nC @ 8 V | ±8V | - | - | 1.25W (Ta), 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIA4265EDJ-T1-GE3P-CHANNEL 20-V (D-S) MOSFET POWE Vishay Siliconix |
2,079 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.8A (Ta), 9A (Tc) | 1.8V, 4.5V | 32mOhm @ 4A, 4.5V | 1V @ 250µA | 36 nC @ 8 V | ±8V | 1180 pF @ 0 V | - | 2.9W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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