+86 075582561136
BOM 업로드
트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIDR5102EP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix |
2,047 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28.2A (Ta), 126A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIJA54ADP-T1-GE3N-CHANNEL 40 V (D-S) MOSFET POWE Vishay Siliconix |
2,934 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 35.4A (Ta), 126A (Tc) | 4.5V, 10V | 2.3mOhm @ 15A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | +20V, -16V | 3850 pF @ 20 V | - | 5.2W (Ta), 65.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI4434DY-T1-E3MOSFET N-CH 250V 2.1A 8SO Vishay Siliconix |
3,652 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.1A (Ta) | 6V, 10V | 155mOhm @ 3A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | - | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7178DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix |
2,717 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 10V | 14mOhm @ 10A, 10V | 4.5V @ 250µA | 72 nC @ 10 V | ±20V | 2870 pF @ 50 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF630PBF-BE3MOSFET N-CH 200V 9A TO220AB Vishay Siliconix |
2,110 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 800 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQJQ186E-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
3,525 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 245A (Tc) | 10V | 2.3mOhm @ 20A, 10V | 3.5V @ 250µA | 185 nC @ 10 V | ±20V | 10552 pF @ 25 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIR5102DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
3,517 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 27A (Ta), 110A (Tc) | 7.5V, 10V | 4.1mOhm @ 20A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±20V | 2850 pF @ 50 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIDR510EP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix |
3,161 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Ta), 148A (Tc) | 7.5V, 10V | 3.6mOhm @ 20A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 4980 pF @ 50 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHA15N60E-GE3N-CHANNEL 600V Vishay Siliconix |
2,627 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 76 nC @ 10 V | ±30V | 1350 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQJQ144AER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
2,534 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 575A (Tc) | 10V | 0.9mOhm @ 20A, 10V | 3.5V @ 250µA | 145 nC @ 10 V | ±20V | 9020 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIDR626DP-T1-RE3N-CHANNEL 60-V (D-S) MOSFET Vishay Siliconix |
2,052 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42.8A (Ta), 100A (Tc) | 6V, 10V | 1.7mOhm @ 20A, 10V | 3.4V @ 250µA | 102 nC @ 10 V | ±20V | 5130 pF @ 30 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIR512DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
2,552 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.1A (Ta), 100A (Tc) | 7.5V, 10V | 4.5mOhm @ 20A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 3400 pF @ 50 V | - | 6W (Ta), 96.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
SQJQ186ER-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) Vishay Siliconix |
3,400 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 329A (Tc) | 10V | 2.3mOhm @ 20A, 10V | 3.5V @ 250µA | 185 nC @ 10 V | ±20V | 10552 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIDR680DP-T1-RE3N-CHANNEL 80-V (D-S) MOSFET Vishay Siliconix |
3,070 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32.8A (Ta), 100A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 3.4V @ 250µA | 105 nC @ 10 V | ±20V | 5150 pF @ 40 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIDR578EP-T1-RE3N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix |
3,693 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17.4A (Ta), 78A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±20V | 2540 pF @ 75 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIDR668DP-T1-RE3N-CHANNEL 100-V (D-S) MOSFET Vishay Siliconix |
2,283 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.2A (Ta), 95A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 3.4V @ 250µA | 108 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SIDR570EP-T1-RE3N-CHANNEL 150 V (D-S) 175C MOSFE Vishay Siliconix |
2,560 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 30.8A (Ta), 90.9A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIDR104AEP-T1-RE3N-CHANNEL 100 V (D-S) 175C MOSFE Vishay Siliconix |
3,480 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21.1A (Ta), 90.5A (Tc) | 7.5V, 10V | 6.1mOhm @ 15A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 3250 pF @ 50 V | - | 6.5W (Ta), 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
2N7002K-T1-E3MOSFET N-CH 60V 300MA SOT23-3 Vishay Siliconix |
212,894 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 300mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 30 pF @ 25 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IRF644PBF-BE3MOSFET N-CH 250V 14A TO220AB Vishay Siliconix |
3,800 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | - | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
