트랜지스터 - FET, MOSFET - 단일

사진: 제조업체 부품 번호 재고 상태 가격 수량 데이터시트 Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHU3N50D-E3

SIHU3N50D-E3

MOSFET N-CH 500V 3A TO251AA

Vishay Siliconix
3,124 -

RFQ

SIHU3N50D-E3

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7726DN-T1-GE3

SI7726DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,906 -

RFQ

SI7726DN-T1-GE3

데이터시트

Tape & Reel (TR) SkyFET®, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.6V @ 250µA 43 nC @ 10 V ±20V 1765 pF @ 15 V - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIR403EDP-T1-GE3

SIR403EDP-T1-GE3

MOSFET P-CH 30V 40A PPAK SO-8

Vishay Siliconix
2,763 -

RFQ

SIR403EDP-T1-GE3

데이터시트

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 6.5mOhm @ 13A, 10V 2.8V @ 250µA 153 nC @ 10 V ±25V 4620 pF @ 15 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUP50010E-GE3

SUP50010E-GE3

MOSFET N-CH 60V 150A TO220AB

Vishay Siliconix
495 -

RFQ

SUP50010E-GE3

데이터시트

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 150A (Tc) 7.5V, 10V 2mOhm @ 30A, 10V 4V @ 250µA 212 nC @ 10 V ±20V 10895 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG186N60EF-GE3

SIHG186N60EF-GE3

MOSFET N-CH 600V 8.4A TO247AC

Vishay Siliconix
453 -

RFQ

SIHG186N60EF-GE3

데이터시트

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB13N50APBF

IRFB13N50APBF

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix
358 -

RFQ

IRFB13N50APBF

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 450mOhm @ 8.4A, 10V 4V @ 250µA 81 nC @ 10 V ±30V 1910 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS9N60APBF

IRFS9N60APBF

MOSFET N-CH 600V 9.2A D2PAK

Vishay Siliconix
1,000 -

RFQ

IRFS9N60APBF

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA11N80E-GE3

SIHA11N80E-GE3

MOSFET N-CH 800V 12A TO220

Vishay Siliconix
446 -

RFQ

SIHA11N80E-GE3

데이터시트

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644SPBF

IRF644SPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
176 -

RFQ

IRF644SPBF

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ48RSPBF

IRFZ48RSPBF

MOSFET N-CH 60V 50A TO263

Vishay Siliconix
992 -

RFQ

IRFZ48RSPBF

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHG25N40D-GE3

SIHG25N40D-GE3

MOSFET N-CH 400V 25A TO247AC

Vishay Siliconix
127 -

RFQ

SIHG25N40D-GE3

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIA110DJ-T1-GE3

SIA110DJ-T1-GE3

MOSFET N-CH 100V 5.4A/12A PPAK

Vishay Siliconix
2,581 -

RFQ

SIA110DJ-T1-GE3

데이터시트

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 5.4A (Ta), 12A (Tc) 7.5V, 10V 55mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 550 pF @ 50 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS108DN-T1-GE3

SIS108DN-T1-GE3

MOSFET N-CH 80V 6.7A/16A PPAK

Vishay Siliconix
2,965 -

RFQ

SIS108DN-T1-GE3

데이터시트

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 6.7A (Ta), 16A (Tc) 7.5V, 10V 34mOhm @ 4A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 545 pF @ 40 V - 3.2W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60AEL-GE3

SIHP22N60AEL-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,342 -

RFQ

SIHP22N60AEL-GE3

데이터시트

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1757 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG180N60E-GE3

SIHG180N60E-GE3

MOSFET N-CH 600V 19A TO247AC

Vishay Siliconix
339 -

RFQ

SIHG180N60E-GE3

데이터시트

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA105N60EF-GE3

SIHA105N60EF-GE3

MOSFET N-CH 600V 29A TO220

Vishay Siliconix
1,096 -

RFQ

SIHA105N60EF-GE3

데이터시트

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 102mOhm @ 13A, 10V 5V @ 250µA 53 nC @ 10 V ±30V 1804 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC40GPBF

IRFIBC40GPBF

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix
133 -

RFQ

IRFIBC40GPBF

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISS28DN-T1-GE3

SISS28DN-T1-GE3

MOSFET N-CH 25V 60A PPAK1212-8S

Vishay Siliconix
3,283 -

RFQ

SISS28DN-T1-GE3

데이터시트

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.52mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V +20V, -16V 3640 pF @ 10 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA64DP-T1-GE3

SIRA64DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,910 -

RFQ

SIRA64DP-T1-GE3

데이터시트

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.1mOhm @ 10A, 10V 2.2V @ 250µA 65 nC @ 10 V +20V, -16V 3420 pF @ 15 V - 27.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA456DJ-T3-GE3

SIA456DJ-T3-GE3

MOSFET N-CH 200V 1.1A/2.6A PPAK

Vishay Siliconix
3,788 -

RFQ

SIA456DJ-T3-GE3

데이터시트

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 1.1A (Ta), 2.6A (Tc) 1.8V, 4.5V 1.38Ohm @ 750mA, 4.5V 1.4V @ 250µA 14.5 nC @ 10 V ±16V 350 pF @ 100 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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