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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIR870ADP-T1-RE3MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix |
3,463 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 6.6mOhm @ 20A, 10V | 3V @ 250µA | 80 nC @ 10 V | ±20V | 2866 pF @ 50 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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IRFU110PBFMOSFET N-CH 100V 4.3A TO251AA Vishay Siliconix |
3,625 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHU5N80AE-GE3MOSFET N-CH 800V 4.4A TO251AA Vishay Siliconix |
3,074 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.4A (Tc) | 10V | 1.35Ohm @ 1.5A, 10V | 4V @ 250µA | 16.5 nC @ 10 V | ±30V | 321 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SQR40N10-25_GE3MOSFET N-CH 100V 40A TO252 REV Vishay Siliconix |
2,083 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 4.5V, 10V | 25mOhm @ 40A, 10V | 2.5V @ 250µA | 70 nC @ 10 V | ±20V | 3380 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQJ410EP-T1_GE3MOSFET N-CH 30V 32A PPAK SO-8 Vishay Siliconix |
2,975 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Tc) | 4.5V, 10V | 3.9mOhm @ 10.3A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 6210 pF @ 15 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIDR668ADP-T1-RE3MOSFET N-CH 100V 23.3A/104A PPAK Vishay Siliconix |
3,063 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 23.3A (Ta), 104A (Tc) | 7.5V, 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 3750 pF @ 50 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIR882DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 Vishay Siliconix |
3,145 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 8.7mOhm @ 20A, 10V | 2.8V @ 250µA | 58 nC @ 10 V | ±20V | 1930 pF @ 50 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SUD25N15-52-BE3MOSFET N-CH 150V 25A DPAK Vishay Siliconix |
3,520 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 25A (Tc) | 6V, 10V | 52mOhm @ 5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 1725 pF @ 25 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
|
IRLU014PBFMOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix |
2,582 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 4V, 5V | 200mOhm @ 4.6A, 5V | 2V @ 250µA | 8.4 nC @ 5 V | ±10V | 400 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF640STRLPBFMOSFET N-CH 200V 18A TO263 Vishay Siliconix |
3,636 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQM40020EL_GE3MOSFET N-CH 40V 100A TO263 Vishay Siliconix |
2,357 | - |
RFQ |
데이터시트 |
Cut Tape (CT),Tube | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.2V @ 250µA | 165 nC @ 10 V | ±20V | 8800 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
SIR640ADP-T1-GE3MOSFET N-CH 40V 41.6A/100A PPAK Vishay Siliconix |
2,146 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 41.6A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 20A, 10V | 2V @ 250µA | 90 nC @ 10 V | ±20V | 4240 pF @ 20 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SUD50P06-15-BE3MOSFET P-CH 60V 50A DPAK Vishay Siliconix |
3,161 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 15mOhm @ 17A, 10V | 3V @ 250µA | 165 nC @ 10 V | ±20V | 4950 pF @ 25 V | - | 2.5W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
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SIHD6N80AE-GE3MOSFET N-CH 800V 5A DPAK Vishay Siliconix |
2,751 | - |
RFQ |
데이터시트 |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQM40N10-30_GE3MOSFET N-CH 100V 40A TO263 Vishay Siliconix |
3,709 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 6V, 10V | 30mOhm @ 15A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 3345 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF520SPBFMOSFET N-CH 100V 9.2A D2PAK Vishay Siliconix |
2,288 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRFU210PBFMOSFET N-CH 200V 2.6A TO251AA Vishay Siliconix |
9,000 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
IRFU014PBFMOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix |
3,497 | - |
RFQ |
데이터시트 |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFD9014PBFMOSFET P-CH 60V 1.1A 4DIP Vishay Siliconix |
2,493 | - |
RFQ |
데이터시트 |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.1A (Ta) | 10V | 500mOhm @ 660mA, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
|
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IRFD9010PBFMOSFET P-CH 50V 1.1A 4DIP Vishay Siliconix |
3,976 | - |
RFQ |
데이터시트 |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 1.1A (Tc) | 10V | 500mOhm @ 580mA, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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