| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  | APT8030LVRGMOSFET N-CH 800V 27A TO264Microchip Technology | 2,242 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | 
|  | APT34F100B2MOSFET N-CH 1000V 35A T-MAXMicrochip Technology | 3,403 | - | RFQ |   데이터시트 | Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 380mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT34F100LMOSFET N-CH 1000V 35A TO264Microchip Technology | 2,290 | - | RFQ |   데이터시트 | Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 35A (Tc) | 10V | 400mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT50M75B2FLLGMOSFET N-CH 500V 57A T-MAXMicrochip Technology | 3,242 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 57A (Tc) | - | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | - | 5590 pF @ 25 V | - | - | - | Through Hole | 
|  | APT84F50B2MOSFET N-CH 500V 84A T-MAXMicrochip Technology | 3,337 | - | RFQ |   데이터시트 | Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 84A (Tc) | 10V | 65mOhm @ 42A, 10V | 5V @ 2.5mA | 340 nC @ 10 V | ±30V | 13500 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT10M09LVFRGMOSFET N-CH 100V 100A TO264Microchip Technology | 2,962 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | - | 9mOhm @ 50A, 10V | 4V @ 2.5mA | 350 nC @ 10 V | - | 9875 pF @ 25 V | - | - | - | Through Hole | 
|  | APT10078SLLGMOSFET N-CH 1000V 14A D3PAKMicrochip Technology | 3,113 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|  | APT8030LVFRGMOSFET N-CH 800V 27A TO264Microchip Technology | 2,479 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 27A (Tc) | - | 300mOhm @ 500mA, 10V | 4V @ 2.5mA | 510 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | 
|  | APT1201R4SFLLGMOSFET N-CH 1200V 9A D3PAKMicrochip Technology | 2,907 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 9A (Tc) | - | 1.4Ohm @ 4.5A, 10V | 5V @ 1mA | 120 nC @ 10 V | - | 2500 pF @ 25 V | - | - | - | Surface Mount | 
|  | APT6013B2LLGMOSFET N-CH 600V 43A T-MAXMicrochip Technology | 3,095 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | - | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | - | 5630 pF @ 25 V | - | - | - | Through Hole | 
|  | APT6013LLLGMOSFET N-CH 600V 43A TO264Microchip Technology | 2,754 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 43A (Tc) | 10V | 130mOhm @ 21.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | ±30V | 5630 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT12080LVRGMOSFET N-CH 1200V 16A TO264Microchip Technology | 2,674 | - | RFQ | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 16A (Tc) | 10V | 800mOhm @ 8A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|  | APT56F60B2MOSFET N-CH 600V 60A T-MAXMicrochip Technology | 2,438 | - | RFQ |   데이터시트 | Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT10050LVFRGMOSFET N-CH 1000V 21A TO264Microchip Technology | 2,794 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | 
|  | APT10050B2VFRGMOSFET N-CH 1000V 21A T-MAXMicrochip Technology | 3,907 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 21A (Tc) | - | 500mOhm @ 500mA, 10V | 4V @ 2.5mA | 500 nC @ 10 V | - | 7900 pF @ 25 V | - | - | - | Through Hole | 
|   | APT40N60JCU3MOSFET N-CH 600V 40A SOT227Microchip Technology | 3,151 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 40A (Tc) | 10V | 70mOhm @ 20A, 10V | 3.9V @ 1mA | 259 nC @ 10 V | ±20V | 7015 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | 
|  | APT6011B2VRGMOSFET N-CH 600V 49A T-MAXMicrochip Technology | 2,034 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 49A (Tc) | - | 110mOhm @ 24.5A, 10V | 4V @ 2.5mA | 450 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | Through Hole | 
|   | APT30M60JMOSFET N-CH 600V 31A ISOTOPMicrochip Technology | 2,717 | - | RFQ |   데이터시트 | Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 5890 pF @ 25 V | - | 355W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | 
|  | APT20M16LFLLGMOSFET N-CH 200V 100A TO264Microchip Technology | 3,257 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 16mOhm @ 50A, 10V | 5V @ 2.5mA | 140 nC @ 10 V | - | 7220 pF @ 25 V | - | - | - | Through Hole | 
|  | APT20M18B2VFRGMOSFET N-CH 200V 100A T-MAXMicrochip Technology | 3,781 | - | RFQ |   데이터시트 | Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | - | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | - | 9880 pF @ 25 V | - | - | - | Through Hole |