트랜지스터 - FET, MOSFET - 단일

사진: 제조업체 부품 번호 재고 상태 가격 수량 데이터시트 Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFH96N20P

IXFH96N20P

MOSFET N-CH 200V 96A TO247AD

IXYS
2,050 -

RFQ

IXFH96N20P

데이터시트

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 4mA 145 nC @ 10 V ±20V 4800 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH160N15T

IXTH160N15T

MOSFET N-CH 150V 160A TO247

IXYS
2,618 -

RFQ

IXTH160N15T

데이터시트

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 160A (Tc) 10V 9.6mOhm @ 500mA, 10V 5V @ 1mA 160 nC @ 10 V ±30V 8800 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R075CPAFKSA1

IPW60R075CPAFKSA1

AUTOMOTIVE

Infineon Technologies
2,587 -

RFQ

IPW60R075CPAFKSA1

데이터시트

Tube * Active - - - - - - - - - - - - - -
IPDQ60R045CFD7XTMA1

IPDQ60R045CFD7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies
3,080 -

RFQ

Tape & Reel (TR) CoolMOS™ Active - MOSFET (Metal Oxide) 600 V - - - - - - - - - - Surface Mount
SIHG64N65E-GE3

SIHG64N65E-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix
3,640 -

RFQ

SIHG64N65E-GE3

데이터시트

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 32A, 10V 4V @ 250µA 369 nC @ 10 V ±30V 7497 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW70N65M2

STW70N65M2

MOSFET N-CH 650V 63A TO247-3

STMicroelectronics
2,959 -

RFQ

STW70N65M2

데이터시트

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 46mOhm @ 31.5A, 10V 4V @ 250µA 117 nC @ 10 V ±25V 5140 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT26N60P

IXTT26N60P

MOSFET N-CH 600V 26A TO268

IXYS
3,874 -

RFQ

IXTT26N60P

데이터시트

Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 270mOhm @ 500mA, 10V 5V @ 250µA 72 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP6N120P

IXFP6N120P

MOSFET N-CH 1200V 6A TO220AB

IXYS
2,493 -

RFQ

IXFP6N120P

데이터시트

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG61N65EF-GE3

SIHG61N65EF-GE3

MOSFET N-CH 650V 64A TO247AC

Vishay Siliconix
2,843 -

RFQ

SIHG61N65EF-GE3

데이터시트

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHW61N65EF-GE3

SIHW61N65EF-GE3

MOSFET N-CH 650V 64A TO247AD

Vishay Siliconix
2,737 -

RFQ

SIHW61N65EF-GE3

데이터시트

Tube E Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 47mOhm @ 30.5A, 10V 4V @ 250µA 371 nC @ 10 V ±30V 7407 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDCTR30120A

NDCTR30120A

MOSFET N-CH 1200V 30A SMD

onsemi
3,154 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - - - -
3400

3400

N30V,RD(MAX)<27M@10V,RD(MAX)<33M

Goford Semiconductor
2,976 -

RFQ

3400

데이터시트

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5.6A - 59mOhm @ 2.8A, 2.5V 1.4V @ 250µA 9.5 nC @ 4.5 V ±12V 820 pF @ 15 V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
PJD9P06A_L2_00001

PJD9P06A_L2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,937 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 2.5A (Ta), 7A (Tc) 4.5V, 10V 190mOhm @ 3.5A, 10V 2.5V @ 250µA 8.3 nC @ 10 V ±20V 430 pF @ 30 V - 2W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
YJL3415A

YJL3415A

P-CH MOSFET 20V 5.6A SOT-23-3L

Yangzhou Yangjie Electronic Technology Co.,Ltd
2,890 -

RFQ

YJL3415A

데이터시트

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 5.6A (Ta) 1.8V, 4.5V 42mOhm @ 5.6A, 4.5V 1V @ 250µA 10.98 nC @ 4.5 V ±12V 1010 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJE8404_R1_00001

PJE8404_R1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,370 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) 1.8V, 4.5V 220mOhm @ 600mA, 4,5V 1.3V @ 250µA 1.5 nC @ 4.5 V ±8V 93 pF @ 15 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJC7438_R1_00001

PJC7438_R1_00001

SOT-323, MOSFET

Panjit International Inc.
2,252 -

RFQ

PJC7438_R1_00001

데이터시트

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 400mA (Ta) 1.8V, 10V 1.45Ohm @ 500mA, 10V 1V @ 250µA 0.95 nC @ 4.5 V ±20V 36 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJC7403_R1_00001

PJC7403_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,040 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 700mA (Ta) 1.8V, 4.5V 325mOhm @ 700mA, 4.5V 1V @ 250µA 2.2 nC @ 4.5 V ±8V 165 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDG330P

FDG330P

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
43,250 -

RFQ

FDG330P

데이터시트

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2A (Ta) - 110mOhm @ 2A, 4.5V 1.5V @ 250µA 7 nC @ 4.5 V ±8V 477 pF @ 6 V - 480mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
G15

G15

P-12V,RD(MAX)<[email protected],RD(MAX)<

Goford Semiconductor
1,909 -

RFQ

G15

데이터시트

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Tc) 2.5V, 4.5V 21mOhm @ 1A, 4.5V 1.2V @ 250µA 48 nC @ 4.5 V ±8V 2700 pF @ 10 V - 2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8796

FDD8796

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
34,346 -

RFQ

FDD8796

데이터시트

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ 일일 평균 RFQ
20,000.000
20,000.000 표준 제품 단위
1800+
1800+ 전 세계 제조업체
15,000+
15,000+ 재고 창고
韩语版

韩语版

제품

韩语版

전화

韩语版

사용자