| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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                    G3R40MT12KSIC MOSFET N-CH 71A TO247-4 GeneSiC Semiconductor |  
                611 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    G3R40MT12JSIC MOSFET N-CH 75A TO263-7 GeneSiC Semiconductor |  
                680 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 75A (Tc) | 15V | 48mOhm @ 35A, 15V | 2.69V @ 10mA | 106 nC @ 15 V | ±15V | 2929 pF @ 800 V | - | 374W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
| 
                     
                    
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                    G3R30MT12KSIC MOSFET N-CH 90A TO247-4 GeneSiC Semiconductor |  
                2,828 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 400W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
                 | 
              
                    G3R30MT12JSIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor |  
                529 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 96A (Tc) | 15V | 36mOhm @ 50A, 15V | 2.69V @ 12mA | 155 nC @ 15 V | ±15V | 3901 pF @ 800 V | - | 459W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    G3R45MT17DSIC MOSFET N-CH 61A TO247-3 GeneSiC Semiconductor |  
                146 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
| 
                     
                    
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                    G3R45MT17KSIC MOSFET N-CH 61A TO247-4 GeneSiC Semiconductor |  
                919 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
| 
                     
                    
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                    G3R20MT12KSIC MOSFET N-CH 128A TO247-4 GeneSiC Semiconductor |  
                689 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 128A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | ±15V | 5873 pF @ 800 V | - | 542W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    G3R20MT12NSIC MOSFET N-CH 105A SOT227 GeneSiC Semiconductor |  
                203 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 105A (Tc) | 15V | 24mOhm @ 60A, 15V | 2.69V @ 15mA | 219 nC @ 15 V | +20V, -10V | 5873 pF @ 800 V | - | 365W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | 
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                    G3R20MT17KSIC MOSFET N-CH 124A TO247-4 GeneSiC Semiconductor |  
                273 | - | 
                    
                    RFQ | 
                   
                   Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 124A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 809W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
                     
                    
                     
                     
                    
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                    G2R120MT33JSIC MOSFET N-CH TO263-7 GeneSiC Semiconductor |  
                217 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G2R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 3300 V | 35A | 20V | 156mOhm @ 20A, 20V | - | 145 nC @ 20 V | +25V, -10V | 3706 pF @ 1000 V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    G3R450MT17DSIC MOSFET N-CH 9A TO247-3 GeneSiC Semiconductor |  
                1,256 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 585mOhm @ 4A, 15V | 2.7V @ 2mA | 18 nC @ 15 V | ±15V | 454 pF @ 1000 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
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                    G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET GeneSiC Semiconductor |  
                135 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | - | - | - | - | - | Through Hole | 
                     
                    
                     
                     
                    
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                    G3R20MT17NSIC MOSFET N-CH 100A SOT227 GeneSiC Semiconductor |  
                160 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | 
                     
                    
                     
                     
                    
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                    GA10SICP12-263TRANS SJT 1200V 25A D2PAK GeneSiC Semiconductor |  
                2,833 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 25A (Tc) | - | 100mOhm @ 10A | - | - | - | 1403 pF @ 800 V | - | 170W (Tc) | 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    GA50JT06-258TRANS SJT 600V 100A TO258 GeneSiC Semiconductor |  
                2,358 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                
                     데이터시트  | 
				 
                Bulk | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 600 V | 100A (Tc) | - | 25mOhm @ 50A | - | - | - | - | - | 769W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | 
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                    G3R12MT12K1200V 12M TO-247-4 G3R SIC MOSFE GeneSiC Semiconductor |  
                3,772 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | - | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 157A (Tc) | 15V, 18V | 13mOhm @ 100A, 18V | 2.7V @ 50mA | 288 nC @ 15 V | +22V, -10V | 9335 pF @ 800 V | - | 567W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    GA20JT12-263TRANS SJT 1200V 45A D2PAK GeneSiC Semiconductor |  
                2,726 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | - | Active | - | SiC (Silicon Carbide Junction Transistor) | 1200 V | 45A (Tc) | - | 60mOhm @ 20A | - | - | - | 3091 pF @ 800 V | - | 282W (Tc) | 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
                 | 
              
                    GA08JT17-247TRANS SJT 1700V 8A TO247AB GeneSiC Semiconductor |  
                2,525 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     데이터시트  | 
				 
                Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole |