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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF2807ZLPBFMOSFET N-CH 75V 75A TO262 Infineon Technologies |
3,068 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRL3303SPBFMOSFET N-CH 30V 38A D2PAK Infineon Technologies |
2,576 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF3305PBFMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
3,680 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 3650 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
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IRFS17N20DPBFMOSFET N-CH 200V 16A D2PAK Infineon Technologies |
2,668 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
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IRFB4215PBFMOSFET N-CH 60V 115A TO220AB Infineon Technologies |
2,303 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 115A (Tc) | 10V | 9mOhm @ 54A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4080 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
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IRF3707ZLPBFMOSFET N-CH 30V 59A TO262 Infineon Technologies |
3,508 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRF3711ZCLPBFMOSFET N-CH 20V 92A TO262 Infineon Technologies |
2,632 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24 nC @ 4.5 V | ±20V | 2150 pF @ 10 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
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IRL8113LPBFMOSFET N-CH 30V 105A TO262 Infineon Technologies |
2,638 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35 nC @ 4.5 V | ±20V | 2840 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFZ46ZLPBFMOSFET N-CH 55V 51A TO262 Infineon Technologies |
3,293 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1460 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRF3315SPBFMOSFET N-CH 150V 21A D2PAK Infineon Technologies |
2,550 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF3315LPBFMOSFET N-CH 150V 21A TO262 Infineon Technologies |
2,870 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFB33N15DPBFMOSFET N-CH 150V 33A TO220AB Infineon Technologies |
2,701 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFS33N15DPBFMOSFET N-CH 150V 33A D2PAK Infineon Technologies |
2,893 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRF1104LPBFMOSFET N-CH 40V 100A TO-262 Infineon Technologies |
2,365 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | - | 9mOhm @ 60A, 10V | 4V @ 250µA | 93 nC @ 10 V | - | 2900 pF @ 25 V | - | - | - | Through Hole |
|
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IRL1104SPBFMOSFET N-CH 40V 104A D2PAK Infineon Technologies |
3,147 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 2.4W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRL1104PBFMOSFET N-CH 40V 104A TO220AB Infineon Technologies |
2,637 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRL1104LPBFMOSFET N-CH 40V 104A TO262 Infineon Technologies |
3,744 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 104A (Tc) | 4.5V, 10V | 8mOhm @ 62A, 10V | 1V @ 250µA | 68 nC @ 4.5 V | ±16V | 3445 pF @ 25 V | - | 2.4W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFS23N20DPBFMOSFET N-CH 200V 24A D2PAK Infineon Technologies |
2,812 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IRL3502PBFMOSFET N-CH 20V 110A TO220AB Infineon Technologies |
2,825 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 110A (Tc) | 4.5V, 7V | 7mOhm @ 64A, 7V | 700mV @ 250µA (Min) | 110 nC @ 4.5 V | ±10V | 4700 pF @ 15 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPC90N04S5L3R3ATMA1MOSFET N-CH 40V 90A 8TDSON-34 Infineon Technologies |
2,582 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.3mOhm @ 45A, 10V | 2V @ 23µA | 40 nC @ 10 V | ±16V | 2145 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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