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트랜지스터 - FET, MOSFET - 단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFS3006TRLPBFMOSFET N-CH 60V 195A D2PAK Infineon Technologies |
3,414 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB108N15N3GATMA1MOSFET N-CH 150V 83A D2PAK Infineon Technologies |
2,276 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 8V, 10V | 10.8mOhm @ 83A, 10V | 4V @ 160µA | 55 nC @ 10 V | ±20V | 3230 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPL60R105P7AUMA1MOSFET N-CH 650V 33A 4VSON Infineon Technologies |
3,939 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 105mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 137W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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BSC074N15NS5ATMA1MOSFET N-CH 150V 114A TSON-8-3 Infineon Technologies |
2,975 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 114A (Tc) | 8V, 10V | 7.4mOhm @ 50A, 10V | 4.6V @ 136µA | 52 nC @ 10 V | ±20V | 4000 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
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IPB032N10N5ATMA1MOSFET N-CH 100V 166A TO263-7 Infineon Technologies |
2,654 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 166A (Tc) | 6V, 10V | 3.2mOhm @ 83A, 10V | 3.8V @ 125µA | 95 nC @ 10 V | ±20V | 6970 pF @ 50 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IAUS240N08S5N019ATMA1MOSFET N-CH 80V 240A HSOG-8 Infineon Technologies |
2,174 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 240A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 160µA | 130 nC @ 10 V | ±20V | 9264 pF @ 40 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPP045N10N3GXKSA1MOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
2,828 | - |
RFQ |
데이터시트 |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 4.5mOhm @ 100A, 10V | 3.5V @ 150µA | 117 nC @ 10 V | ±20V | 8410 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IPB073N15N5ATMA1MOSFET N-CH 150V 114A TO263-3 Infineon Technologies |
2,005 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 114A (Tc) | 8V, 10V | 7.3mOhm @ 57A, 10V | 4.6V @ 160µA | 61 nC @ 10 V | ±20V | 4700 pF @ 75 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB60R165CPATMA1MOSFET N-CH 600V 21A TO263-3 Infineon Technologies |
3,542 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | ±20V | 2000 pF @ 100 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFS3004TRL7PPMOSFET N-CH 40V 240A D2PAK Infineon Technologies |
3,693 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9130 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPL60R125C7AUMA1MOSFET N-CH 600V 17A 4VSON Infineon Technologies |
3,842 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 125mOhm @ 7.8A, 10V | 4V @ 390µA | 34 nC @ 10 V | ±20V | 1500 pF @ 400 V | - | 103W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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IPB027N10N5ATMA1MOSFET N-CH 100V 120A D2PAK Infineon Technologies |
3,226 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 6V, 10V | 2.7mOhm @ 100A, 10V | 3.8V @ 184µA | 139 nC @ 10 V | ±20V | 10300 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPT60R045CFD7XTMA1MOSFET N-CH 600V 52A 8HSOF Infineon Technologies |
2,191 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPP600N25N3GXKSA1MOSFET N-CH 250V 25A TO220-3 Infineon Technologies |
2,042 | - |
RFQ |
데이터시트 |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29 nC @ 10 V | ±20V | 2350 pF @ 100 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP4768PBFMOSFET N-CH 250V 93A TO247AC Infineon Technologies |
3,635 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 93A (Tc) | 10V | 17.5mOhm @ 56A, 10V | 5V @ 250µA | 270 nC @ 10 V | ±20V | 10880 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IAUT260N10S5N019ATMA1MOSFET N-CH 100V 260A 8HSOF Infineon Technologies |
3,351 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 260A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 210µA | 166 nC @ 10 V | ±20V | 11830 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPB60R080P7ATMA1MOSFET N-CH 650V 37A D2PAK Infineon Technologies |
2,603 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51 nC @ 10 V | ±20V | 2180 pF @ 400 V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPB180N08S402ATMA1MOSFET N-CH 80V 180A TO263-7 Infineon Technologies |
2,962 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 180A (Tc) | 10V | 2.2mOhm @ 100A, 10V | 4V @ 220µA | 167 nC @ 10 V | ±20V | 11550 pF @ 25 V | - | 277W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFB4227PBFMOSFET N-CH 200V 65A TO220AB Infineon Technologies |
2,107 | - |
RFQ |
데이터시트 |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 24mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 4600 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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IMBF170R1K0M1XTMA1SICFET N-CH 1700V 5.2A TO263-7 Infineon Technologies |
2,289 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5.2A (Tc) | 12V, 15V | 1000mOhm @ 1A, 15V | 5.7V @ 1.1mA | 5 nC @ 12 V | +20V, -10V | 275 pF @ 1000 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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