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트랜지스터 - FET, MOSFET - 단일

사진: 제조업체 부품 번호 재고 상태 가격 수량 데이터시트 Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SSM3K7002KFU,LXH

SSM3K7002KFU,LXH

SMOS LOW RON NCH IO: 0.4A VDSS:

Toshiba Semiconductor and Storage 		2,609 -

RFQ

SSM3K7002KFU,LXH

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
SSM3J168F,LXHF

SSM3J168F,LXHF

SMOS LOW RON VDS:-60V VGSS:+10/-

Toshiba Semiconductor and Storage 		3,692 -

RFQ

SSM3J168F,LXHF

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, U-MOSVI Active P-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4V, 10V 1.55Ohm @ 200mA, 10V 2V @ 1mA 3 nC @ 10 V +10V, -20V 82 pF @ 10 V - 600mW (Ta) 150°C Surface Mount
SSM3K376R,LXHF

SSM3K376R,LXHF

SMOS LOW RON NCH ID: 4A VDSS: 30

Toshiba Semiconductor and Storage 		3,537 -

RFQ

SSM3K376R,LXHF

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 1.8V, 4.5V 56mOhm @ 2A, 4.5V 1V @ 1mA 2.2 nC @ 4.5 V +12V, -8V 200 pF @ 10 V - 1W (Ta) 150°C Surface Mount
SSM6K810R,LXHF

SSM6K810R,LXHF

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Toshiba Semiconductor and Storage 		2,793 -

RFQ

SSM6K810R,LXHF

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V 2.5V @ 100µA 3.2 nC @ 4.5 V ±20V 430 pF @ 15 V - 1.5W (Ta) 175°C Surface Mount
SSM6K809R,LXHF

SSM6K809R,LXHF

AUTO AEC-Q SS MOS N-CH LOGIC-LEV

Toshiba Semiconductor and Storage 		2,954 -

RFQ

SSM6K809R,LXHF

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V 2.5V @ 100µA 9.3 nC @ 10 V ±20V 550 pF @ 10 V - 1.5W (Ta) 175°C Surface Mount
SSM6J808R,LXHF

SSM6J808R,LXHF

AUTO AEC-Q SS MOS P-CH LOGIC-LEV

Toshiba Semiconductor and Storage 		3,683 -

RFQ

SSM6J808R,LXHF

데이터시트

 Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 7A (Ta) 4V, 10V 35mOhm @ 2.5A, 10V 2V @ 100µA 24.2 nC @ 10 V +10V, -20V 1020 pF @ 10 V - 1.5W (Ta) 150°C Surface Mount
TPCP8107,LF

TPCP8107,LF

MOSFET P-CH 40V 8A PS-8

Toshiba Semiconductor and Storage 		2,746 -

RFQ

Tape & Reel (TR),Cut Tape (CT) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 6V, 10V 18mOhm @ 4A, 10V 3V @ 1mA 44.6 nC @ 10 V +10V, -20V 2160 pF @ 10 V - 1W (Ta) 175°C Surface Mount
TPN1200APL,L1Q

TPN1200APL,L1Q

PB-F POWER MOSFET TRANSISTOR TSO

Toshiba Semiconductor and Storage 		3,330 -

RFQ

TPN1200APL,L1Q

데이터시트

 Tape & Reel (TR),Cut Tape (CT) U-MOSIX-H Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 4.5V, 10V 11.5mOhm @ 20A, 10V 2.5V @ 300µA 24 nC @ 10 V ±20V 1855 pF @ 50 V - 630mW (Ta), 104W (Tc) 175°C Surface Mount
TK45P03M1,RQ(S

TK45P03M1,RQ(S

MOSFET N-CH 30V 45A DPAK

Toshiba Semiconductor and Storage 		3,717 -

RFQ

TK45P03M1,RQ(S

데이터시트

 Tape & Reel (TR) U-MOSVI-H Obsolete N-Channel MOSFET (Metal Oxide) 30 V 45A (Ta) 4.5V, 10V 9.7mOhm @ 22.5A, 10V 2.3V @ 200µA 25 nC @ 10 V ±20V 1500 pF @ 10 V - - - Surface Mount
TK4A53D(STA4,Q,M)

TK4A53D(STA4,Q,M)

MOSFET N-CH 525V 4A TO220SIS

Toshiba Semiconductor and Storage 		2,912 -

RFQ

TK4A53D(STA4,Q,M)

데이터시트

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 525 V 4A (Ta) 10V 1.7Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK4A55DA(STA4,Q,M)

TK4A55DA(STA4,Q,M)

MOSFET N-CH 550V 3.5A TO220SIS

Toshiba Semiconductor and Storage 		3,409 -

RFQ

TK4A55DA(STA4,Q,M)

데이터시트

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 3.5A (Ta) 10V 2.45Ohm @ 1.8A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TK4A55D(STA4,Q,M)

TK4A55D(STA4,Q,M)

MOSFET N-CH 550V 4A TO220SIS

Toshiba Semiconductor and Storage 		2,308 -

RFQ

TK4A55D(STA4,Q,M)

데이터시트

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 4A (Ta) 10V 1.88Ohm @ 2A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 490 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK4A60DB(STA4,Q,M)

TK4A60DB(STA4,Q,M)

MOSFET N-CH 600V 3.7A TO220SIS

Toshiba Semiconductor and Storage 		3,312 -

RFQ

TK4A60DB(STA4,Q,M)

데이터시트

 Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.7A (Ta) 10V 2Ohm @ 1.9A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 35W (Tc) 150°C (TJ) Through Hole
TK10S04K3L(T6L1,NQ

TK10S04K3L(T6L1,NQ

MOSFET N-CH 40V 10A DPAK

Toshiba Semiconductor and Storage 		3,748 -

RFQ

TK10S04K3L(T6L1,NQ

데이터시트

 Tape & Reel (TR) U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 28mOhm @ 5A, 10V 3V @ 1mA 10 nC @ 10 V ±20V 410 pF @ 10 V - 25W (Tc) 175°C (TJ) Surface Mount
TK11A60D(STA4,Q,M)

TK11A60D(STA4,Q,M)

MOSFET N-CH 600V 11A TO220SIS

Toshiba Semiconductor and Storage 		2,543 -

RFQ

TK11A60D(STA4,Q,M)

데이터시트

 Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 650mOhm @ 5.5A, 10V 4V @ 1mA 28 nC @ 10 V ±30V 1550 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
TK15A60D(STA4,Q,M)

TK15A60D(STA4,Q,M)

MOSFET N-CH 600V 15A TO220SIS

Toshiba Semiconductor and Storage 		3,473 -

RFQ

TK15A60D(STA4,Q,M)

데이터시트

 Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 1mA 45 nC @ 10 V ±30V 2600 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
TK16A45D(STA4,Q,M)

TK16A45D(STA4,Q,M)

MOSFET N-CH 450V 16A TO220SIS

Toshiba Semiconductor and Storage 		3,734 -

RFQ

TK16A45D(STA4,Q,M)

데이터시트

 Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 16A - 270mOhm @ 8A, 10V - - - - - - - Through Hole
TK16A55D(STA4,Q,M)

TK16A55D(STA4,Q,M)

MOSFET N-CH 550V 16A TO220SIS

Toshiba Semiconductor and Storage 		2,253 -

RFQ

TK16A55D(STA4,Q,M)

데이터시트

 Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 550 V 16A (Ta) - 330mOhm @ 8A, 10V 4V @ 1mA 45 nC @ 10 V - 2600 pF @ 25 V - - 150°C (TJ) Through Hole
TK18E10K3,S1X(S

TK18E10K3,S1X(S

MOSFET N-CH 100V 18A TO220-3

Toshiba Semiconductor and Storage 		2,062 -

RFQ

TK18E10K3,S1X(S

데이터시트

 Tube U-MOSIV Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Ta) - 42mOhm @ 9A, 10V - 33 nC @ 10 V - - - - 150°C (TJ) Through Hole
TK20A25D,S5Q(M

TK20A25D,S5Q(M

MOSFET N-CH 250V 20A TO220SIS

Toshiba Semiconductor and Storage 		3,550 -

RFQ

TK20A25D,S5Q(M

데이터시트

 Tube π-MOSVII Obsolete N-Channel MOSFET (Metal Oxide) 250 V 20A (Ta) 10V 100mOhm @ 10A, 10V 3.5V @ 1mA 55 nC @ 10 V ±20V 2550 pF @ 100 V - 45W (Tc) 150°C (TJ) Through Hole
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