| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | BS270SMALL SIGNAL FIELD-EFFECT TRANSIFairchild Semiconductor | 3,764 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRFW634BTMFP001N-CHANNEL POWER MOSFETFairchild Semiconductor | 2,992 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.1A (Ta) | 10V | 450mOhm @ 4.05A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±30V | 1000 pF @ 25 V | - | 3.13W (Ta), 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FDP032N08POWER FIELD-EFFECT TRANSISTOR, 1Fairchild Semiconductor | 2,750 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 3.2mOhm @ 75A, 10V | 4.5V @ 250µA | 220 nC @ 10 V | ±20V | 15160 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | FDMS5360L-F085FDMS5360 - N-CHANNEL POWERTRENCHFairchild Semiconductor | 2,669 | - | RFQ |   데이터시트 | Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 60A, 10V | 3V @ 250µA | 72 nC @ 10 V | ±20V | 3695 pF @ 30 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | FDMS0310ASN-CHANNEL POWERTRENCH SYNCFET 30Fairchild Semiconductor | 3,578 | - | RFQ |   데이터시트 | Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 19A (Ta), 22A (Tc) | 4.5V, 10V | 4.3mOhm @ 19A, 10V | 3V @ 1mA | 37 nC @ 10 V | ±20V | 2280 pF @ 15 V | - | 2.5W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FDD5N50UTM3A, 500V, 2OHM, N-CHANNEL MOSFETFairchild Semiconductor | 3,015 | - | RFQ |   데이터시트 | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 
|   | FDMS5362LF085N-CHANNEL POWER TRENCH MOSFETFairchild Semiconductor | 2,964 | - | RFQ |   데이터시트 | Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17.6A (Tc) | 4.5V, 10V | 33mOhm @ 17.6A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 878 pF @ 25 V | - | 41.7W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | RFD14N05SM9APOWER FIELD-EFFECT TRANSISTOR, 1Fairchild Semiconductor | 3,640 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 14A (Tc) | 10V | 100mOhm @ 14A, 10V | 4V @ 250µA | 40 nC @ 20 V | ±20V | 570 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | SI3457DVSMALL SIGNAL FIELD-EFFECT TRANSIFairchild Semiconductor | 2,031 | - | RFQ |   데이터시트 | Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 50mOhm @ 4A, 10V | 3V @ 250µA | 8.1 nC @ 5 V | ±25V | 470 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FDS8449SMALL SIGNAL FIELD-EFFECT TRANSIFairchild Semiconductor | 3,423 | - | RFQ |   데이터시트 | Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 7.6A (Ta) | 4.5V, 10V | 29mOhm @ 7.6A, 10V | 3V @ 250µA | 11 nC @ 5 V | ±20V | 760 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FDMA7672MOSFET N-CH 30V 9A 6MICROFETFairchild Semiconductor | 2,821 | - | RFQ |   데이터시트 | Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4.5V, 10V | 21mOhm @ 9A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 760 pF @ 15 V | - | 2.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FQP24N08MOSFET N-CH 80V 24A TO220-3Fairchild Semiconductor | 2,153 | - | RFQ |   데이터시트 | Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 24A (Tc) | 10V | 60mOhm @ 12A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±25V | 750 pF @ 25 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | HUF76423P3POWER FIELD-EFFECT TRANSISTOR, 3Fairchild Semiconductor | 3,456 | - | RFQ |   데이터시트 | Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 30mOhm @ 35A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | HRF3205F102N-CHANNEL POWER MOSFET, 100A, 55Fairchild Semiconductor | 2,011 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | FQP9N50CMOSFET N-CH 500V 9A TO220-3Fairchild Semiconductor | 2,699 | - | RFQ |   데이터시트 | Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 800mOhm @ 4.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | FDD3672-F085FDD3672 - N-CHANNEL ULTRAFET TREFairchild Semiconductor | 2,644 | - | RFQ |   데이터시트 | Bulk | Automotive, AEC-Q101, UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 44A (Tc) | 6V, 10V | 47mOhm @ 21A, 6V | 4V @ 250µA | 36 nC @ 10 V | ±20V | 1635 pF @ 25 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | FQP17P06POWER FIELD-EFFECT TRANSISTOR, 1Fairchild Semiconductor | 3,967 | - | RFQ |   데이터시트 | Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 120mOhm @ 8.5A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±25V | 900 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | FQB19N20TMMOSFET N-CH 200V 19.4A D2PAKFairchild Semiconductor | 3,828 | - | RFQ |   데이터시트 | Bulk | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 19.4A (Tc) | 10V | 150mOhm @ 9.7A, 10V | 5V @ 250µA | 40 nC @ 10 V | ±30V | 1600 pF @ 25 V | - | 3.13W (Ta), 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | FCP125N60EPOWER FIELD-EFFECT TRANSISTOR, NFairchild Semiconductor | 3,787 | - | RFQ |   데이터시트 | Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95 nC @ 10 V | ±20V | 2990 pF @ 380 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | FDD16AN08A0POWER FIELD-EFFECT TRANSISTOR, 9Fairchild Semiconductor | 2,836 | - | RFQ |   데이터시트 | Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 9A (Ta), 50A (Tc) | 6V, 10V | 16mOhm @ 50A, 10V | 4V @ 250µA | 47 nC @ 10 V | ±20V | 1874 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |