| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | RF1S30P06SMP-CHANNEL POWER MOSFETHarris Corporation | 2,624 | - | RFQ |   데이터시트 | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A | - | - | - | - | - | - | - | - | - | Surface Mount | 
|   | RF1S540SMN-CHANNEL POWER MOSFETHarris Corporation | 3,060 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | RFM12P10P-CHANNEL POWER MOSFETHarris Corporation | 3,226 | - | RFQ |   데이터시트 | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 1500 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RFM12N10N-CHANNEL POWER MOSFETHarris Corporation | 3,072 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 200mOhm @ 12A, 10V | 4V @ 250µA | - | ±20V | 850 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RFP25N05LN-CHANNEL, MOSFETHarris Corporation | 3,544 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 25A (Tc) | 4V, 5V | 47mOhm @ 25A, 5V | 2V @ 250µA | 80 nC @ 10 V | ±10V | - | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RFP2N18N-CHANNEL, MOSFETHarris Corporation | 3,000 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 180 V | 2A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 4V @ 2mA | - | ±20V | 200 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RLD03N06CLEN-CHANNEL POWER MOSFETHarris Corporation | 3,890 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|   | RF1S30P05SMP-CHANNEL POWER MOSFETHarris Corporation | 3,120 | - | RFQ |   데이터시트 | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 30A | - | - | - | - | - | - | - | - | - | Surface Mount | 
|   | RFB18N10CSVMN-CHANNEL POWER MOSFETHarris Corporation | 3,062 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 10V | 100mOhm @ 9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | - | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | RFM15N05LN-CHANNEL POWER MOSFETHarris Corporation | 3,201 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 15A (Tc) | 5V | 140mOhm @ 7.5A, 5V | - | - | ±10V | 900 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | RF1S30P06SM9AP-CHANNEL POWER MOSFETHarris Corporation | 2,486 | - | RFQ |   데이터시트 | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 65mOhm @ 30A, 10V | 4V @ 250µA | 170 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | RF1S70N06MOSFET N-CH 60V 70A I2PAKHarris Corporation | 2,510 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Tc) | - | 14mOhm @ 70A, 10V | 4V @ 250µA | 215 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IRF6103.3A 200V 1.500 OHM N-CHANNELHarris Corporation | 2,865 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | HUF75343S375 A, 55 V, 0.009 OHM, N-CHANNELHarris Corporation | 2,159 | - | RFQ |   데이터시트 | Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IRFU320MOSFET N-CH 400V 3.1A TO251AAHarris Corporation | 3,179 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.1A (Tc) | - | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRF96203.5A, 200V, 1.500 OHM, P-CHANNELHarris Corporation | 2,192 | - | RFQ |   데이터시트 | Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IRF730N-CHANNEL, MOSFETHarris Corporation | 3,653 | - | RFQ |   데이터시트 | Bulk | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | Through Hole | 
|   | IRF710PFET, 2A I(D), 400V, 3.6OHM, 1-EHarris Corporation | 2,800 | - | RFQ |   데이터시트 | Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
|   | HUF75333S3MOSFET N-CH 55V 66A D2PAKHarris Corporation | 2,684 | - | RFQ |   데이터시트 | Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | - | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
|   | HUF76122P3HUF76122P3Harris Corporation | 2,879 | - | RFQ | Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |