| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | IGBTType | Voltage-CollectorEmitterBreakdown(Max) | Current-Collector(Ic)(Max) | Current-CollectorPulsed(Icm) | Vce(on)(Max)@VgeIc | Power-Max | SwitchingEnergy | InputType | GateCharge | Td(on/off)@25°C | TestCondition | ReverseRecoveryTime(trr) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | AOK50B65H1IGBT 650V 50A TO-247Alpha & Omega Semiconductor Inc. | 2,999 | - | RFQ |   데이터시트 | Tube | Alpha IGBT™ | Active | - | 650 V | 100 A | 150 A | 2.4V @ 15V, 50A | 375 W | 1.92mJ (on), 850µJ (off) | Standard | 76 nC | 37ns/141ns | 400V, 50A, 6Ohm, 15V | 261 ns | -55°C ~ 175°C (TJ) | Through Hole | 
|   | FGM623SIGBT 600V 30A 60W TO3PFSanken | 2,965 | - | RFQ |   데이터시트 | Bulk | - | Active | - | 600 V | 30 A | 100 A | 1.7V @ 15V, 30A | 60 W | - | Standard | 65 nC | 100ns/300ns | 300V, 30A, 39Ohm, 15V | - | 150°C (TJ) | Through Hole | 
|   | MGD623NIGBT 600V 50A 150W TO3PSanken | 3,830 | - | RFQ |   데이터시트 | Bulk | - | Active | - | 600 V | 50 A | 100 A | 2.3V @ 15V, 50A | 150 W | - | Standard | - | 75ns/300ns | 300V, 50A, 39Ohm, 15V | 300 ns | 150°C (TJ) | Through Hole | 
|   | DGTD65T40S1PTIGBT 600V-X TO247 TUBE 0.45KDiodes Incorporated | 2,257 | - | RFQ |   데이터시트 | Tube | - | Active | Field Stop | 650 V | 80 A | 160 A | 2.4V @ 15V, 40A | 341 W | 1.15mJ (on), 350µJ (off) | Standard | 219 nC | 58ns/245ns | 400V, 40A, 7.9Ohm, 15V | 145 ns | -40°C ~ 175°C (TJ) | Through Hole | 
|   | STGWA15H120F2IGBT HB 1200V 15A HS TO247-3STMicroelectronics | 3,793 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 1200 V | 30 A | 60 A | 2.6V @ 15V, 15A | 259 W | 380µJ (on), 370µJ (off) | Standard | 67 nC | 23ns/111ns | 600V, 15A, 10Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | GT50J341,QPB-F IGBT / TRANSISTOR TO-3PN ICToshiba Semiconductor and Storage | 2,192 | - | RFQ |   데이터시트 | Tube | - | Active | - | 600 V | 50 A | 100 A | 2.2V @ 15V, 50A | 200 W | - | Standard | - | - | - | - | 175°C (TJ) | Through Hole | 
|   | GT40QR21(STA1,E,DDISCRETE IGBT TRANSISTOR TO-3PN(Toshiba Semiconductor and Storage | 3,583 | - | RFQ |   데이터시트 | Tube | - | Active | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | 230 W | -, 290µJ (off) | Standard | - | - | 280V, 40A, 10Ohm, 20V | 600 ns | 175°C (TJ) | Through Hole | 
|   | IGW40N60H3FKSA1IGBT 600V 80A 306W TO247-3Infineon Technologies | 3,340 | - | RFQ |   데이터시트 | Tube | TrenchStop® | Active | Trench Field Stop | 600 V | 80 A | 160 A | 2.4V @ 15V, 40A | 306 W | 1.68mJ | Standard | 223 nC | 19ns/197ns | 400V, 40A, 7.9Ohm, 15V | - | -40°C ~ 175°C (TJ) | Through Hole | 
|   | GT40RR21(STA1,EPB-F IGBT / TRANSISTOR TO-3PN ICToshiba Semiconductor and Storage | 3,951 | - | RFQ |   데이터시트 | Tube | - | Active | - | 1200 V | 40 A | 200 A | 2.8V @ 15V, 40A | 230 W | -, 540µJ (off) | Standard | - | - | 280V, 40A, 10Ohm, 20V | 600 ns | 175°C (TJ) | Through Hole | 
|   | AOK30B60DIGBT 600V 60A 208W TO247Alpha & Omega Semiconductor Inc. | 3,736 | - | RFQ |   데이터시트 | Tube | Alpha IGBT™ | Active | - | 600 V | 60 A | 128 A | 2.1V @ 15V, 30A | 278 W | 1.18mJ (on), 200µJ (off) | Standard | 47 nC | 26ns/71ns | 400V, 30A, 10Ohm, 15V | 137 ns | -55°C ~ 150°C (TJ) | Through Hole | 
|   | AOK30B135D2IGBT 1350V 30A TO-247Alpha & Omega Semiconductor Inc. | 2,826 | - | RFQ | Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | |
|   | STGWA15M120DF3IGBT 1200V 30A 259WSTMicroelectronics | 2,923 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 1200 V | 30 A | 60 A | 2.3V @ 15V, 15A | 259 W | 550µJ (on), 850µJ (off) | Standard | 53 nC | 26ns/122ns | 600V, 15A, 22Ohm, 15V | 270 ns | -55°C ~ 175°C (TJ) | Through Hole | 
|   | HGT1S10N120BNSIGBT 1200V 35A 298W TO263ABonsemi | 2,138 | - | RFQ |   데이터시트 | Tube | - | Last Time Buy | NPT | 1200 V | 35 A | 80 A | 2.7V @ 15V, 10A | 298 W | 320µJ (on), 800µJ (off) | Standard | 100 nC | 23ns/165ns | 960V, 10A, 10Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | MGD623SIGBT 600V 50A 150W TO3PSanken | 3,920 | - | RFQ |   데이터시트 | Bulk | - | Active | - | 600 V | 50 A | 100 A | 2.4V @ 15V, 50A | 150 W | - | Standard | - | 75ns/300ns | 300V, 50A, 39Ohm, 15V | 300 ns | 150°C (TJ) | Through Hole | 
|   | AOK20B120D1IGBT 1200V 20A TO-247Alpha & Omega Semiconductor Inc. | 3,188 | - | RFQ |   데이터시트 | Tube | Alpha IGBT™ | Active | - | 1200 V | 40 A | 80 A | 1.8V @ 15V, 20A | 340 W | 940µJ (off) | Standard | 67.5 nC | -/152ns | 600V, 20A, 15Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | AOK30B120D2IGBT 1200V 30A TO-247Alpha & Omega Semiconductor Inc. | 2,178 | - | RFQ |   데이터시트 | Tube | Alpha IGBT™ | Active | - | 1200 V | 60 A | 120 A | 2.2V @ 15V, 30A | 340 W | 1.28mJ (off) | Standard | 67 nC | -/115ns | 600V, 30A, 10Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
| .jpg)  | IXYH30N65C3IGBT 650V 60A 270W TO247ADIXYS | 3,328 | - | RFQ |   데이터시트 | Tube | GenX3™, XPT™ | Active | PT | 650 V | 60 A | 118 A | 2.7V @ 15V, 30A | 270 W | 1mJ (on), 270µJ (off) | Standard | 44 nC | 21ns/75ns | 400V, 30A, 10Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | APT20GN60BDQ1GIGBT 600V 40A 136W TO247Microchip Technology | 2,105 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 600 V | 40 A | 60 A | 1.9V @ 15V, 20A | 136 W | 230µJ (on), 580µJ (off) | Standard | 120 nC | 9ns/140ns | 400V, 20A, 4.3Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | APT30GN60BGIGBT 600V 63A 203W TO247Microchip Technology | 2,540 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 600 V | 63 A | 90 A | 1.9V @ 15V, 30A | 203 W | 525µJ (on), 700µJ (off) | Standard | 165 nC | 12ns/155ns | 400V, 30A, 4.3Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | STGWA60V60DFIGBT BIPO 600V 60A TO247-3STMicroelectronics | 2,386 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 600 V | 80 A | 240 A | 2.3V @ 15V, 60A | 375 W | 750µJ (on), 550µJ (off) | Standard | 334 nC | 60ns/208ns | 400V, 60A, 4.7Ohm, 15V | 74 ns | -55°C ~ 175°C (TJ) | Through Hole |