| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | ProductStatus | IGBTType | Voltage-CollectorEmitterBreakdown(Max) | Current-Collector(Ic)(Max) | Current-CollectorPulsed(Icm) | Vce(on)(Max)@VgeIc | Power-Max | SwitchingEnergy | InputType | GateCharge | Td(on/off)@25°C | TestCondition | ReverseRecoveryTime(trr) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|  | APT50GF120B2RGIGBT 1200V 135A 781W TMAXMicrochip Technology | 2,883 | - | RFQ |   데이터시트 | Tube | - | Active | NPT | 1200 V | 135 A | 150 A | 3V @ 15V, 50A | 781 W | 3.6mJ (on), 2.64mJ (off) | Standard | 340 nC | 25ns/260ns | 800V, 50A, 1Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IXGT32N170AIGBT 1700V 32A 350W TO268IXYS | 2,304 | - | RFQ |   데이터시트 | Tube | - | Active | NPT | 1700 V | 32 A | 110 A | 5V @ 15V, 21A | 350 W | 1.5mJ (off) | Standard | 155 nC | 46ns/260ns | 850V, 32A, 2.7Ohm, 15V | - | -55°C ~ 150°C (TJ) | Surface Mount | 
| .jpg)  | IXXX100N60C3H1IGBT 600V 170A 695W PLUS247IXYS | 2,870 | - | RFQ | Tube | GenX3™, XPT™ | Active | PT | 600 V | 170 A | 340 A | 2.2V @ 15V, 70A | 695 W | 2mJ (on), 950µJ (off) | Standard | 150 nC | 30ns/90ns | 360V, 70A, 2Ohm, 15V | 140 ns | - | Through Hole | |
|   | IXBT42N170-TRLIXBT42N170 TRLIXYS | 3,438 | - | RFQ | Tape & Reel (TR) | BIMOSFET™ | Active | - | 1700 V | 80 A | 300 A | 2.8V @ 15V, 42A | 360 W | - | Standard | 188 nC | 37ns/340ns | 850V, 42A, 10Ohm, 15V | - | - | Surface Mount | |
|   | IXYR100N65A3V1IGBTIXYS | 2,579 | - | RFQ | Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|   | IXXK200N60B3IGBT 600V 380A 1630W TO264IXYS | 2,583 | - | RFQ |   데이터시트 | Tube | GenX3™, XPT™ | Active | PT | 600 V | 380 A | 900 A | 1.7V @ 15V, 100A | 1630 W | 2.85mJ (on), 2.9mJ (off) | Standard | 315 nC | 48ns/160ns | 360V, 100A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXXK200N60C3IGBT 600V 340A 1630W TO264IXYS | 3,177 | - | RFQ |   데이터시트 | Tube | GenX3™, XPT™ | Active | PT | 600 V | 340 A | 900 A | 2.1V @ 15V, 100A | 1630 W | 3mJ (on), 1.7mJ (off) | Standard | 315 nC | 47ns/125ns | 360V, 100A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXG70IF1200NAIGBT MODULE - OTHERS SMPD-BIXYS | 2,136 | - | RFQ | Tube | X2PT™, XPT™ | Active | PT | 1200 V | 130 A | - | - | - | - | Standard | - | - | - | - | - | Chassis Mount | |
|   | IXBF40N160IGBT 1600V 28A 250W I4PACIXYS | 3,148 | - | RFQ |   데이터시트 | Tube | BIMOSFET™ | Active | - | 1600 V | 28 A | - | 7.1V @ 15V, 20A | 250 W | - | Standard | 130 nC | - | 960V, 25A, 22Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IXYH8N250CHVIGBTIXYS | 3,333 | - | RFQ |   데이터시트 | Tube | XPT™ | Active | - | 2500 V | 29 A | 70 A | 4V @ 15V, 8A | 280 W | 2.6mJ (on), 1.07mJ (off) | Standard | 45 nC | 11ns/180ns | 1250V, 8A, 15Ohm, 15V | 5 ns | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXXT100N75B4HVIGBT DISCRETE TO-268HVIXYS | 3,219 | - | RFQ | Tube | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
| .jpg)  | IXGX82N120A3IGBT 1200V 260A 1250W PLUS247IXYS | 2,098 | - | RFQ | Tube | GenX3™ | Active | PT | 1200 V | 260 A | 580 A | 2.05V @ 15V, 82A | 1250 W | 5.5mJ (on), 12.5mJ (off) | Standard | 340 nC | 34ns/265ns | 600V, 80A, 2Ohm, 15V | - | - | Through Hole | |
|   | IXGK82N120A3IGBT 1200V 260A 1250W TO264IXYS | 2,831 | - | RFQ |   데이터시트 | Tube | GenX3™ | Active | PT | 1200 V | 260 A | 580 A | 2.05V @ 15V, 82A | 1250 W | 5.5mJ (on), 12.5mJ (off) | Standard | 340 nC | 34ns/265ns | 600V, 80A, 2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | 
|   | IXGK82N120B3IGBT 1200V 230A 1250W TO264IXYS | 3,861 | - | RFQ |   데이터시트 | Tube | GenX3™ | Active | PT | 1200 V | 230 A | 500 A | 3.2V @ 15V, 82A | 1250 W | 5mJ (on), 3.3mJ (off) | Standard | 350 nC | 30ns/210ns | 600V, 80A, 2Ohm, 15V | - | -55°C ~ 150°C (TJ) | Through Hole | 
|  | APT80GP60B2GIGBT 600V 100A 1041W TMAXMicrochip Technology | 2,813 | - | RFQ |   데이터시트 | Tube | POWER MOS 7® | Active | PT | 600 V | 100 A | - | 2.7V @ 15V, 80A | 1041 W | - | Standard | - | - | - | - | - | Through Hole | 
|   | IXYK100N120C3IGBT 1200V 188A 1150W TO264IXYS | 3,870 | - | RFQ |   데이터시트 | Tube | GenX3™, XPT™ | Active | - | 1200 V | 188 A | 490 A | 3.5V @ 15V, 100A | 1150 W | 6.5mJ (on), 2.9mJ (off) | Standard | 270 nC | 32ns/123ns | 600V, 100A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | APT200GN60B2GIGBT 600V 283A 682W TO247Microchip Technology | 2,481 | - | RFQ |   데이터시트 | Tube | - | Active | Trench Field Stop | 600 V | 283 A | 600 A | 1.85V @ 15V, 200A | 682 W | 13mJ (on), 11mJ (off) | Standard | 1180 nC | 50ns/560ns | 400V, 200A, 1Ohm, 15V | - | -55°C ~ 175°C (TJ) | Through Hole | 
|   | IXBT42N170AIGBT 1700V 42A 357W TO268IXYS | 3,968 | - | RFQ |   데이터시트 | Tube | BIMOSFET™ | Active | - | 1700 V | 42 A | 265 A | 6V @ 15V, 21A | 357 W | 3.43mJ (on), 430µJ (off) | Standard | 188 nC | 19ns/200ns | 850V, 21A, 1Ohm, 15V | 330 ns | -55°C ~ 150°C (TJ) | Surface Mount | 
|   | IXYK30N170CV1DISC IGBT XPT-HI VOLTAGE TO-264(IXYS | 2,397 | - | RFQ | Tube | XPT™ | Active | PT | 1700 V | 100 A | 250 A | 4V @ 15V, 30A | 937 W | 3.6mJ (on), 1.8mJ (off) | Standard | 150 nC | 16ns/143ns | 850V, 30A, 2.7Ohm, 15V | 33 ns | -55°C ~ 175°C (TJ) | Through Hole | |
|  | MMIX1X100N60B3H1IGBT 600V 145A 400W SMPDIXYS | 2,081 | - | RFQ |   데이터시트 | Tube | GenX3™, XPT™ | Active | - | 600 V | 145 A | 440 A | 1.8V @ 15V, 70A | 400 W | 1.9mJ (on), 2mJ (off) | Standard | 143 nC | 30ns/120ns | 360V, 70A, 2Ohm, 15V | 140 ns | -55°C ~ 150°C (TJ) | Surface Mount |