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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS2DHE3_A/HDIODE GEN PURP 200V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,192 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A |
|
SL42-E3/9ATDIODE SCHOTTKY 20V 4A DO214AB Vishay General Semiconductor - Diodes Division |
2,824 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
V15P8HM3_A/IDIODE SCHOTTKY 80V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,590 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.2 mA @ 80 V | 80 V | 15A | -40°C ~ 150°C | 660 mV @ 15 A |
|
|
SL43-E3/9ATDIODE SCHOTTKY 30V 4A DO214AB Vishay General Semiconductor - Diodes Division |
2,975 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 4A | -55°C ~ 125°C | 420 mV @ 4 A | |
|
|
V15PN50-M3/87ADIODE SCHOTTKY 50V 15A TO277A Vishay General Semiconductor - Diodes Division |
2,469 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 50 V | 50 V | 15A | -40°C ~ 150°C | 560 mV @ 15 A |
|
V20PW45-M3/IDIODE SCHOTTKY 45V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,991 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 3000pF @ 4V, 1MHz | - | 1.5 mA @ 45 V | 45 V | 20A | -40°C ~ 150°C | 610 mV @ 20 A |
|
P300G-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
ESH1B-M3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,681 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
GI500-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,240 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.1 V @ 9.4 A | |
|
|
ESH1D-M3/5ATDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,835 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
GI502-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,313 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.1 V @ 9.4 A | |
|
|
ESH1B-M3/61TDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,517 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
GI508-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,922 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.1 V @ 9.4 A | |
|
VIT2060G-E3/4WDIODE SCHOTTKY 60V 10A TO262AA Vishay General Semiconductor - Diodes Division |
3,074 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 900 mV @ 10 A | |
|
|
ESH1D-M3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,793 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
P300A-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,558 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
VSSB310-E3/5BTDIODE SCHOTTKY 100V 1.9A DO214AA Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 250 µA @ 100 V | 100 V | 1.9A | -40°C ~ 150°C | 700 mV @ 3 A |
|
|
P300B-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,802 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
VSSB410S-E3/5BTDIODE SCHOTTKY 100V 1.9A DO214AA Vishay General Semiconductor - Diodes Division |
2,115 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 1.5 µA @ 70 V | 100 V | 1.9A | -40°C ~ 150°C | 770 mV @ 4 A |
|
|
GI510-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,579 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 28pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.1 V @ 9.4 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
