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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS3PDHM3_A/IDIODE AVALANCHE 200V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,046 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 200 V | 200 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
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SGL41-60-E3/97DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,641 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
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AR4PJ-M3/87ADIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
3,806 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 4 A |
|
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AS3PGHM3_A/HDIODE AVALANCHE 400V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,829 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 400 V | 400 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
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VS-6ESH01HM3/87ADIODE GEN PURP 100V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,729 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 2 µA @ 100 V | 100 V | 6A | -65°C ~ 175°C | 940 mV @ 6 A |
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AR4PJ-M3/86ADIODE AVALANCHE 600V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 600 V | 600 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 4 A |
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AS3PGHM3_A/IDIODE AVALANCHE 400V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,701 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 400 V | 400 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
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VS-6ESH02HM3/87ADIODE GEN PURP 200V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,016 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 2 µA @ 200 V | 200 V | 6A | -65°C ~ 175°C | 940 mV @ 6 A |
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GF1JHE3/67ADIODE GEN PURP 600V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 2 µs | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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AR4PG-M3/86ADIODE AVALANCHE 400V 2A TO277A Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
데이터시트 |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 77pF @ 4V, 1MHz | 140 ns | 10 µA @ 400 V | 400 V | 2A (DC) | -55°C ~ 175°C | 1.6 V @ 4 A |
|
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AS3PJHM3_A/HDIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,030 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
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VBT1045BP-E3/4WDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,996 | - |
RFQ |
데이터시트 |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 10A (DC) | 200°C (Max) | 680 mV @ 10 A |
|
|
AS3PJHM3_A/IDIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
ES3F-M3/57TDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,312 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
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GP02-20-E3/73DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
데이터시트 |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
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AS3PKHM3_A/HDIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,330 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
|
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ES3G-M3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
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GP02-25-E3/73DIODE GEN PURP 2.5KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
데이터시트 |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 2500 V | 2500 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
VS-6TQ035-M3DIODE SCHOTTKY 35V 6A TO-220 Vishay General Semiconductor - Diodes Division |
2,073 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 35 V | 35 V | 6A | -55°C ~ 175°C | 730 mV @ 12 A | |
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AS3PKHM3_A/IDIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,263 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
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