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| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-70HFLR40S05DIODE GEN PURP 400V 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,319 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
1N1128ASTANDARD RECTIFIER Microchip Technology |
2,710 | - |
RFQ |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 5 µA @ 600 V | 600 V | - | -65°C ~ 150°C | 2.2 V @ 10 A | ||
|
VS-12FL40S05DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,594 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
MBR7580RDIODE SCHOTTKY REV 80V DO5 GeneSiC Semiconductor |
3,841 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1 mA @ 80 V | 80 V | 75A | -55°C ~ 150°C | 840 mV @ 75 A | |
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JANTX1N5311UR-1DIODE CURRENT REG 100V Microchip Technology |
2,422 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
|
JAN1N5307-1/TRCURRENT REGULATOR Microchip Technology |
2,586 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
1N6662/TRSTD RECTIFIER Microchip Technology |
3,666 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Military, MIL-PRF- 19500/587 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1 V @ 400 mA |
|
|
1N1124STANDARD RECTIFIER Microchip Technology |
2,571 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-12FLR40S05DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
JAN1N5309UR-1/TRCURRENT REGULATOR Microchip Technology |
3,581 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - |
|
|
JANTX1N5312UR-1CURRENT REGULATOR DIODE Microchip Technology |
2,326 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
|
JAN1N5308-1/TRCURRENT REGULATOR Microchip Technology |
2,888 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
VS-88HF80DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,462 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
1N1124ASTANDARD RECTIFIER Microchip Technology |
2,646 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
EGP10G-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,629 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
CDBB3200-GDIODE SCHOTTKY 200V 3A DO214AA Comchip Technology |
2,453 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Not For New Designs | Surface Mount | 250pF @ 4V, 1MHz | - | 500 µA @ 200 V | 200 V | 3A (DC) | -50°C ~ 175°C | 900 mV @ 3 A | |
|
ES3FBHM4GDIODE GEN PURP 300V 3A DO214AA Taiwan Semiconductor Corporation |
2,377 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A |
|
|
ES3GBHM4GDIODE GEN PURP 400V 3A DO214AA Taiwan Semiconductor Corporation |
2,525 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 41pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.13 V @ 3 A |
|
1N5818 R0GDIODE SCHOTTKY 30V 1A DO204AL Taiwan Semiconductor Corporation |
3,493 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 55pF @ 4V, 1MHz | - | 1 mA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 550 mV @ 1 A | |
|
|
ES3JBHM4GDIODE GEN PURP 600V 3A DO214AA Taiwan Semiconductor Corporation |
3,893 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.45 V @ 3 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
