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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS14 M2GDIODE SCHOTTKY 40V 1A DO214AC Taiwan Semiconductor Corporation |
2,779 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
RS1DL RUGDIODE GEN PURP 200V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,892 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
|
SS16 M2GDIODE SCHOTTKY 60V 1A DO214AC Taiwan Semiconductor Corporation |
3,124 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
JAN1N5418DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
2,846 | - |
RFQ |
데이터시트 |
Bulk | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
|
RS1GL RUGDIODE GEN PURP 400V 800MA SUBSMA Taiwan Semiconductor Corporation |
3,946 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 800mA | -55°C ~ 150°C | 1.3 V @ 800 mA | |
|
JANTXV1N4148UB/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,291 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/116 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 200°C | 1.2 V @ 100 mA | |
|
BASH21LT1GHIGH VOLT DIODE onsemi |
2,355 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 250 V | 200mA (DC) | -55°C ~ 175°C | 1.25 V @ 200 mA | |
|
|
JANTX1N5313UR-1CURRENT REGULATOR DIODE WEC |
2,916 | - |
RFQ |
Bulk,Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
JAN1N5294-1/TRCURRENT REGULATOR Microchip Technology |
3,706 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
|
VS-88HFR80DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,785 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
1N1124RASTANDARD RECTIFIER Microchip Technology |
3,806 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
1N483B/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,674 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 200mA | -65°C ~ 200°C | 1 V @ 100 mA | |
|
JANTXV1N6628US/TRRECTIFIER UFR,FRR Microchip Technology |
2,952 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/590 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 10V, 1MHz | 30 ns | 2 µA @ 660 V | 660 V | 1.75A | -65°C ~ 150°C | 1.35 V @ 2 A | |
|
|
JANTX1N5305UR-1CURRENT REGULATOR DIODE Microchip Technology |
3,738 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Surface Mount | - | - | - | - | - | - | - | |
|
|
JAN1N5293-1/TRCURRENT REGULATOR Microchip Technology |
3,832 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | - | - | Active | Through Hole | - | - | - | - | - | - | - | |
|
VS-40HFL10S05DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,949 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 100 V | 100 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
|
1N1125STANDARD RECTIFIER Microchip Technology |
2,248 | - |
RFQ |
데이터시트 |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
1N3612/TRSTD RECTIFIER Microchip Technology |
3,395 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
|
VS-86HF80MDIODE GEN PURPOSE 85A DO-5 Vishay General Semiconductor - Diodes Division |
2,230 | - |
RFQ |
데이터시트 |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
1N1351STANDARD RECTIFIER Microchip Technology |
2,964 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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