다이오드-정류기-단일

사진: 제조업체 부품 번호 재고 상태 가격 수량 데이터시트 Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N4933GHA0G

1N4933GHA0G

DIODE GEN PURP 50V 1A DO204AL

Taiwan Semiconductor Corporation
3,251 -

RFQ

1N4933GHA0G

데이터시트

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 50 V 50 V 1A -55°C ~ 150°C 1.2 V @ 1 A
HERAF1006G C0G

HERAF1006G C0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation
3,735 -

RFQ

HERAF1006G C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 600 V 600 V 10A -55°C ~ 150°C 1.7 V @ 10 A
MBR790 C0G

MBR790 C0G

DIODE SCHOTTKY 90V 7.5A TO220AC

Taiwan Semiconductor Corporation
3,683 -

RFQ

MBR790 C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
1N4934G A0G

1N4934G A0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
3,213 -

RFQ

1N4934G A0G

데이터시트

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
HERAF1007G C0G

HERAF1007G C0G

DIODE GEN PURP 800V 10A ITO220AC

Taiwan Semiconductor Corporation
2,124 -

RFQ

HERAF1007G C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 800 V 800 V 10A -55°C ~ 150°C 1.7 V @ 10 A
MBR790HC0G

MBR790HC0G

DIODE SCHOTTKY 90V 7.5A TO220AC

Taiwan Semiconductor Corporation
2,321 -

RFQ

MBR790HC0G

데이터시트

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 7.5A -55°C ~ 150°C 920 mV @ 7.5 A
1N4934GHA0G

1N4934GHA0G

DIODE GEN PURP 100V 1A DO204AL

Taiwan Semiconductor Corporation
3,232 -

RFQ

1N4934GHA0G

데이터시트

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 100 V 100 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF62GHA0G

SF62GHA0G

DIODE GEN PURP 100V 6A DO201AD

Taiwan Semiconductor Corporation
3,829 -

RFQ

SF62GHA0G

데이터시트

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 100 V 100 V 6A -55°C ~ 150°C 975 mV @ 6 A
PU6BCH

PU6BCH

25NS, 6A, 100V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation
3,030 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 110pF @ 4V, 1MHz 25 ns 2 µA @ 100 V 100 V 6A (DC) -55°C ~ 175°C 940 mV @ 6 A
PU6DCH

PU6DCH

25NS, 6A, 200V, ULTRA FAST RECOV

Taiwan Semiconductor Corporation
2,789 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 110pF @ 4V, 1MHz 25 ns 2 µA @ 200 V 200 V 6A (DC) -55°C ~ 175°C 940 mV @ 6 A
HERAF1008G C0G

HERAF1008G C0G

DIODE GEN PURP 10A ITO220AC

Taiwan Semiconductor Corporation
2,297 -

RFQ

HERAF1008G C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 60pF @ 4V, 1MHz 80 ns 10 µA @ 1000 V - 10A -55°C ~ 150°C 1.7 V @ 10 A
MBRF10100HC0G

MBRF10100HC0G

DIODE SCHOTTKY 100V 10A ITO220AC

Taiwan Semiconductor Corporation
3,995 -

RFQ

MBRF10100HC0G

데이터시트

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 100 V 100 V 10A -55°C ~ 150°C 850 mV @ 10 A
1N4935G A0G

1N4935G A0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,086 -

RFQ

1N4935G A0G

데이터시트

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF63G A0G

SF63G A0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation
3,463 -

RFQ

SF63G A0G

데이터시트

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1601G C0G

HERAF1601G C0G

DIODE GEN PURP 50V 16A ITO220AC

Taiwan Semiconductor Corporation
3,440 -

RFQ

HERAF1601G C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 50 V 50 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150 C0G

MBRF10150 C0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation
2,811 -

RFQ

MBRF10150 C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
1N4935GHA0G

1N4935GHA0G

DIODE GEN PURP 200V 1A DO204AL

Taiwan Semiconductor Corporation
3,733 -

RFQ

1N4935GHA0G

데이터시트

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 4V, 1MHz 200 ns 5 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.2 V @ 1 A
SF63GHA0G

SF63GHA0G

DIODE GEN PURP 150V 6A DO201AD

Taiwan Semiconductor Corporation
3,150 -

RFQ

SF63GHA0G

데이터시트

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 100pF @ 4V, 1MHz 35 ns 5 µA @ 150 V 150 V 6A -55°C ~ 150°C 975 mV @ 6 A
HERAF1602G C0G

HERAF1602G C0G

DIODE GEN PURP 100V 16A ITO220AC

Taiwan Semiconductor Corporation
3,839 -

RFQ

HERAF1602G C0G

데이터시트

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 150pF @ 4V, 1MHz 50 ns 10 µA @ 100 V 100 V 16A -55°C ~ 150°C 1 V @ 16 A
MBRF10150HC0G

MBRF10150HC0G

DIODE SCHOTTKY 150V 10A ITO220AC

Taiwan Semiconductor Corporation
3,745 -

RFQ

MBRF10150HC0G

데이터시트

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 150 V 150 V 10A -55°C ~ 150°C 1.05 V @ 10 A
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