사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4933GHA0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
3,251 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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HERAF1006G C0GDIODE GEN PURP 600V 10A ITO220AC Taiwan Semiconductor Corporation |
3,735 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
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MBR790 C0GDIODE SCHOTTKY 90V 7.5A TO220AC Taiwan Semiconductor Corporation |
3,683 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 7.5A | -55°C ~ 150°C | 920 mV @ 7.5 A | |
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1N4934G A0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,213 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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HERAF1007G C0GDIODE GEN PURP 800V 10A ITO220AC Taiwan Semiconductor Corporation |
2,124 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
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MBR790HC0GDIODE SCHOTTKY 90V 7.5A TO220AC Taiwan Semiconductor Corporation |
2,321 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 7.5A | -55°C ~ 150°C | 920 mV @ 7.5 A |
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1N4934GHA0GDIODE GEN PURP 100V 1A DO204AL Taiwan Semiconductor Corporation |
3,232 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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SF62GHA0GDIODE GEN PURP 100V 6A DO201AD Taiwan Semiconductor Corporation |
3,829 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
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PU6BCH25NS, 6A, 100V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
3,030 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 110pF @ 4V, 1MHz | 25 ns | 2 µA @ 100 V | 100 V | 6A (DC) | -55°C ~ 175°C | 940 mV @ 6 A | |
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PU6DCH25NS, 6A, 200V, ULTRA FAST RECOV Taiwan Semiconductor Corporation |
2,789 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 110pF @ 4V, 1MHz | 25 ns | 2 µA @ 200 V | 200 V | 6A (DC) | -55°C ~ 175°C | 940 mV @ 6 A | |
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HERAF1008G C0GDIODE GEN PURP 10A ITO220AC Taiwan Semiconductor Corporation |
2,297 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 1000 V | - | 10A | -55°C ~ 150°C | 1.7 V @ 10 A | |
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MBRF10100HC0GDIODE SCHOTTKY 100V 10A ITO220AC Taiwan Semiconductor Corporation |
3,995 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
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1N4935G A0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,086 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
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SF63G A0GDIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation |
3,463 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A | |
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HERAF1601G C0GDIODE GEN PURP 50V 16A ITO220AC Taiwan Semiconductor Corporation |
3,440 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 1 V @ 16 A | |
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MBRF10150 C0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
2,811 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A | |
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1N4935GHA0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
3,733 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
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SF63GHA0GDIODE GEN PURP 150V 6A DO201AD Taiwan Semiconductor Corporation |
3,150 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 100pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 6A | -55°C ~ 150°C | 975 mV @ 6 A |
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HERAF1602G C0GDIODE GEN PURP 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,839 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 1 V @ 16 A | |
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MBRF10150HC0GDIODE SCHOTTKY 150V 10A ITO220AC Taiwan Semiconductor Corporation |
3,745 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A |