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다이오드-정류기-단일
| 사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HERAF807G C0GDIODE GEN PURP 800V 8A ITO220AC Taiwan Semiconductor Corporation |
3,490 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 60pF @ 4V, 1MHz | 80 ns | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.7 V @ 8 A | |
|
SS12L MHGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
2,680 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A | |
|
BA158G A0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,933 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A | |
|
|
MBRF1090 C0GDIODE SCHOTTKY 90V 10A ITO220AC Taiwan Semiconductor Corporation |
2,622 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
SFT12GHA0GDIODE GEN PURP 100V 1A TS-1 Taiwan Semiconductor Corporation |
3,694 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
MBR10100 C0GDIODE SCHOTTKY 100V 10A TO220AC Taiwan Semiconductor Corporation |
3,535 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
|
SS12LHM2GDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
2,593 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
BA158GHA0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
2,361 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
MBRF1090HC0GDIODE SCHOTTKY 90V 10A ITO220AC Taiwan Semiconductor Corporation |
2,025 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
|
SFT13G A0GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
3,136 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
|
MBR10150 C0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
2,555 | - |
RFQ |
데이터시트 |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A | |
|
|
SS12LHMHGDIODE SCHOTTKY 20V 1A SUB SMA Taiwan Semiconductor Corporation |
3,365 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 450 mV @ 1 A |
|
|
BA159GHA0GDIODE GEN PURP 1A DO204AL Taiwan Semiconductor Corporation |
3,161 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 1000 V | - | 1A | -55°C ~ 150°C | 1.2 V @ 1 A |
|
|
MBRF16100 C0GDIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,710 | - |
RFQ |
데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A | |
|
|
SFT13GHA0GDIODE GEN PURP 150V 1A TS-1 Taiwan Semiconductor Corporation |
2,199 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
|
|
MBR10150HC0GDIODE GEN PURP 150V 10A TO220AC Taiwan Semiconductor Corporation |
3,799 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 100 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.05 V @ 10 A |
|
|
SS13L M2GDIODE SCHOTTKY 30V 1A SUB SMA Taiwan Semiconductor Corporation |
2,398 | - |
RFQ |
데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
BAT42 A0GDIODE SCHOTTKY 30V 200MA DO35 Taiwan Semiconductor Corporation |
2,592 | - |
RFQ |
Tape & Box (TB) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 7pF @ 1V, 1MHz | 5 ns | 100 nA @ 25 V | 30 V | 200mA | -65°C ~ 125°C | 650 mV @ 50 mA | ||
|
|
MBRF16100HC0GDIODE SCHOTTKY 100V 16A ITO220AC Taiwan Semiconductor Corporation |
3,768 | - |
RFQ |
데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A |
|
|
SFT14G A0GDIODE GEN PURP 200V 1A TS-1 Taiwan Semiconductor Corporation |
2,017 | - |
RFQ |
데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 35 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A |
- 1500+ 일일 평균 RFQ
- 20,000.000 표준 제품 단위
- 1800+ 전 세계 제조업체
- 15,000+ 재고 창고
