사진: | 제조업체 부품 번호 | 재고 상태 | 가격 | 수량 | 데이터시트 | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
MBRF1650HC0GDIODE SCHOTTKY 50V 16A ITO220AC Taiwan Semiconductor Corporation |
3,407 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A |
![]() |
SFT18G A0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
3,043 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
![]() |
MBR1060HC0GDIODE SCHOTTKY 60V 10A TO220AC Taiwan Semiconductor Corporation |
3,658 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 60 V | 60 V | 10A | -55°C ~ 150°C | 800 mV @ 10 A |
|
SS15L M2GDIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,161 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
![]() |
HER103G A0GDIODE GEN PURP 200V 1A DO204AL Taiwan Semiconductor Corporation |
2,829 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
MBRF1660 C0GDIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation |
2,663 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A | |
![]() |
SFT18GHA0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
2,146 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 35 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
![]() |
MBR1090 C0GDIODE GEN PURP 90V 10A TO220AC Taiwan Semiconductor Corporation |
2,248 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A | |
|
SS15L MHGDIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,801 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
![]() |
HER104G A0GDIODE GEN PURP 300V 1A DO204AL Taiwan Semiconductor Corporation |
3,263 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
![]() |
MBRF1660HC0GDIODE SCHOTTKY 60V 16A ITO220AC Taiwan Semiconductor Corporation |
3,912 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 500 µA @ 60 V | 60 V | 16A | -55°C ~ 150°C | 750 mV @ 16 A |
![]() |
SK12H45 A0GDIODE SCHOTTKY 45V 12A DO201AD Taiwan Semiconductor Corporation |
3,124 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 45 V | 45 V | 12A | 200°C (Max) | 550 mV @ 12 A | |
![]() |
MBR1090HC0GDIODE GEN PURP 90V 10A TO220AC Taiwan Semiconductor Corporation |
2,305 | - |
RFQ |
![]() 데이터시트 |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -55°C ~ 150°C | 850 mV @ 10 A |
|
SS15LHM2GDIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation |
2,150 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
![]() |
HER105G A0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
3,836 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
![]() |
MBRF1690 C0GDIODE SCHOTTKY 90V 16A ITO220AC Taiwan Semiconductor Corporation |
2,730 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 90 V | 90 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A | |
![]() |
SK12H60 A0GDIODE SCHOTTKY 60V 12A DO201AD Taiwan Semiconductor Corporation |
2,516 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 120 µA @ 60 V | 60 V | 12A | 200°C (Max) | 700 mV @ 12 A | |
![]() |
MBR16100 C0GDIODE SCHOTTKY 100V 16A TO220AC Taiwan Semiconductor Corporation |
2,157 | - |
RFQ |
![]() 데이터시트 |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Through Hole | - | - | 300 µA @ 100 V | 100 V | 16A | -55°C ~ 150°C | 850 mV @ 16 A | |
|
SS15LHMHGDIODE SCHOTTKY 50V 1A SUB SMA Taiwan Semiconductor Corporation |
3,237 | - |
RFQ |
![]() 데이터시트 |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A |
![]() |
MUR160A A0GDIODE GEN PURP 600V 1A DO204AL Taiwan Semiconductor Corporation |
3,715 | - |
RFQ |
![]() 데이터시트 |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 27pF @ 4V, 1MHz | 50 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.25 V @ 1 A |